中国物理B ›› 2005, Vol. 14 ›› Issue (3): 583-585.doi: 10.1088/1009-1963/14/3/028

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

汤晓燕, 张义门, 张玉明, 郜锦侠   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2004-05-20 修回日期:2004-11-04 出版日期:2005-03-02 发布日期:2005-03-02
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60476007).

6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2004-05-20 Revised:2004-11-04 Online:2005-03-02 Published:2005-03-02
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60476007).

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摘要： A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.

Abstract: A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.

Key words: SBSD-MOSFET, FISD, sidewall, 6H-SiC

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices) 73.30.+y (Surface double layers, Schottky barriers, and work functions)