中国物理B ›› 2005, Vol. 14 ›› Issue (10): 2145-2148.doi: 10.1088/1009-1963/14/10/038

• • 上一篇    

Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

刘发民1, 张立德2, 李国华3   

  1. (1)Department of Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China; (2)Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; (3)National Laboratory for Superlattices and Microstructure,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2005-03-01 修回日期:2005-05-24 出版日期:2005-10-20 发布日期:2005-10-20
  • 基金资助:
    Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

Liu Fa-Min (刘发民)a, Zhang Li-De (张立德)b, Li Guo-Hua (李国华)c   

  1. a Department of Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China; b Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; c National Laboratory for Superlattices and Microstructure,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2005-03-01 Revised:2005-05-24 Online:2005-10-20 Published:2005-10-20
  • Supported by:
    Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

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摘要： The composite films of the nanocrystalline GaAs1-xSbx--SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx--SiO2 composite films, as compared with that of the corresponding bulk semiconductor,which is due to the quantum confinement effect.

关键词: nanocrystalline GaAs1-xSbx, photoluminescence, transmission absorption, quantum confinement effect

Abstract: The composite films of the nanocrystalline GaAs1-xSbx--SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx--SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.

Key words: nanocrystalline GaAs1-xSbx, photoluminescence, transmission absorption, quantum confinement effect

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 81.15.Cd (Deposition by sputtering) 78.66.Fd (III-V semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))