中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107801-107801.doi: 10.1088/1674-1056/ab3e44

所属专题： SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart   

  1. 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
    3 Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa;
    4 Faculty of Electrical and Computer Engineering, State University of Campinas-UNICAMP, Campinas CEP 13083-852, Brazil
  • 收稿日期:2019-06-30 修回日期:2019-08-24 出版日期:2019-10-05 发布日期:2019-10-05
  • 通讯作者: Kaikai Xu E-mail:kaikaix@uestc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61704019).

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Yanxu Chen(陈彦旭)1, Dongliang Xu(许栋梁)1, Kaikai Xu(徐开凯)1, Ning Zhang(张宁)1, Siyang Liu(刘斯扬)2, Jianming Zhao(赵建明)1, Qian Luo(罗谦)1, Lukas W. Snyman3, Jacobus W. Swart4   

  1. 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2 National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
    3 Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa;
    4 Faculty of Electrical and Computer Engineering, State University of Campinas-UNICAMP, Campinas CEP 13083-852, Brazil
  • Received:2019-06-30 Revised:2019-08-24 Online:2019-10-05 Published:2019-10-05
  • Contact: Kaikai Xu E-mail:kaikaix@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61704019).

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摘要： Si p+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

关键词: silicon light-emitting diode, reverse bias, electro-optic modulation

Abstract: Si p+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

Key words: silicon light-emitting diode, reverse bias, electro-optic modulation

中图分类号:  (Electroluminescence)

  • 78.60.Fi
73.61.Ey (III-V semiconductors)