中国物理B ›› 2002, Vol. 11 ›› Issue (11): 1175-1178.doi: 10.1088/1009-1963/11/11/314

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Dispersive properties of tunnelling-induced transparency in an asymmetric double quantum well

王立军1, 卓仲畅2, 高锦岳2, 苏雪梅3   

  1. (1)Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, China; Laboratory of Excited State Process, Chinese Academy of Sciences, Changchun 130021, China; (2)Department of Physics, Jilin University, Chuangchun 130023, China; (3)Department of Physics, Jilin University, Chuangchun 130023, China; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, China; Laboratory of Excited State Process, Chinese Academy of Sciences, Changchun
  • 收稿日期:2002-04-09 出版日期:2002-11-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10074021 and 6007815) and by the Doctoral Programme Foundation of Institution of Higher Education China (Grant No 19201038).

Dispersive properties of tunnelling-induced transparency in an asymmetric double quantum well

Su Xue-Mei (苏雪梅)abc, Zhuo Zhong-Chang (卓仲畅)a, Wang Li-Jun (王立军)bc, Gao Jin-Yue (高锦岳)a    

  1. a Department of Physics, Jilin University, Chuangchun 130023, China; b Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, China; c Laboratory of Excited State Process, Chinese Academy of Sciences, Changchun 130021, China
  • Received:2002-04-09 Online:2002-11-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10074021 and 6007815) and by the Doctoral Programme Foundation of Institution of Higher Education China (Grant No 19201038).

摘要: We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum (c=3×108). The group velocity in a specific GaAs/AlGaAs sample is calculated to be vg=c/4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.

Abstract: We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum (c=3×108). The group velocity in a specific GaAs/AlGaAs sample is calculated to be vg=c/4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.

Key words: Fano interference, double quantum well, dispersion

中图分类号:  (Quantum wells)

  • 68.65.Fg
73.21.Fg (Quantum wells) 73.40.Gk (Tunneling) 61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?) 42.79.Sz (Optical communication systems, multiplexers, and demultiplexers?) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces)