中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/21/10/108505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

陈钊, 杨薇, 刘磊, 万成昊, 李磊, 贺永发, 刘宁炀, 王磊, 李丁, 陈伟华, 胡晓东   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2012-02-20 修回日期:2012-04-20 出版日期:2012-09-01 发布日期:2012-09-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51102003, and 60990313), the National Basic Research Program of China (Grant No. 2012CB619304), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014).

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

Chen Zhao (陈钊), Yang Wei (杨薇), Liu Lei (刘磊), Wan Cheng-Hao (万成昊), Li Lei (李磊), He Yong-Fa (贺永发), Liu Ning-Yang (刘宁炀), Wang Lei (王磊), Li Din (李丁), Chen Wei-Hua (陈伟华), Hu Xiao-Dong (胡晓东)   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2012-02-20 Revised:2012-04-20 Online:2012-09-01 Published:2012-09-01
  • Contact: Hu Xiao-Dong E-mail:huxd@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51102003, and 60990313), the National Basic Research Program of China (Grant No. 2012CB619304), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014).

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摘要： The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped quantum well model, which involves analysis on its energy band, carrier concentration, overlap of electron and hole wave functions, radiative recombination rate, and internal quantum efficiency. The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions (above 90%) under the polarization field. Consequently, the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells, which is three times lower than that in a conventional LED.

关键词: efficiency droop alleviation, InGaN/GaN triangular quantum well, blue light emitting diode

Abstract: The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped quantum well model, which involves analysis on its energy band, carrier concentration, overlap of electron and hole wave functions, radiative recombination rate, and internal quantum efficiency. The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions (above 90%) under the polarization field. Consequently, the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells, which is three times lower than that in a conventional LED.

Key words: efficiency droop alleviation, InGaN/GaN triangular quantum well, blue light emitting diode

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
61.72.uj (III-V and II-VI semiconductors) 68.65.Fg (Quantum wells)