中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/21/10/108505
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
陈钊, 杨薇, 刘磊, 万成昊, 李磊, 贺永发, 刘宁炀, 王磊, 李丁, 陈伟华, 胡晓东
Chen Zhao (陈钊), Yang Wei (杨薇), Liu Lei (刘磊), Wan Cheng-Hao (万成昊), Li Lei (李磊), He Yong-Fa (贺永发), Liu Ning-Yang (刘宁炀), Wang Lei (王磊), Li Din (李丁), Chen Wei-Hua (陈伟华), Hu Xiao-Dong (胡晓东)
摘要: The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped quantum well model, which involves analysis on its energy band, carrier concentration, overlap of electron and hole wave functions, radiative recombination rate, and internal quantum efficiency. The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions (above 90%) under the polarization field. Consequently, the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells, which is three times lower than that in a conventional LED.
中图分类号: (Light-emitting devices)