中国物理B ›› 1997, Vol. 6 ›› Issue (3): 223-230.doi: 10.1088/1004-423X/6/3/008

• • 上一篇    

RECOMBINATION DYNAMICS IN ASYMMETRIC COUPLED QUANTUM WELL STRUCTURES

茅惠兵1, 徐仲英2, 沈学础3   

  1. (1)Department of Materials Science, Fudan University, Shanghai 200433, China; (2)Institute of Semiconductors, Academia Sinica, Beijing 100083, China; (3)State Key Laboratory for Infrared Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1995-12-15 出版日期:1997-03-20 发布日期:1997-03-20

RECOMBINATION DYNAMICS IN ASYMMETRIC COUPLED QUANTUM WELL STRUCTURES

MAO HUI-BING (茅惠兵)a, SHEN XUE-CHU (沈学础)b, XU ZHONG-YING (徐仲英)c   

  1. a Department of Materials Science, Fudan University, Shanghai 200433, China; b State Key Laboratory for Infrared Physics, Academia Sinica, Shanghai 200083, China; c Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • Received:1995-12-15 Online:1997-03-20 Published:1997-03-20

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摘要： The time-resolved photoluminescence (PL) investigations of asymmetric coupled quantum well structures have been carried out in this paper. The experimental results show that for a wider interbarrier thickness the PL in the AlGaAs well will decay almost as a single exponential function, and for a thin interbarrier thickness the PL decay in the AlGaAs well is not a single exponential: the decay rate decreases gradually. These results indicate that when the tunneling becomes the main decay process in the AlGaAs well, the "effective mass filtering" phenomenon will be displayed in the PL decay process, which decreases the tunneling rate. At low temperature, the PL decay time increases with the increase of temperature. With further increase of temperature, the PL decay time decreases because of the increase of the tunneling rate and nonradiative recombination coefficient.

Abstract: The time-resolved photoluminescence (PL) investigations of asymmetric coupled quantum well structures have been carried out in this paper. The experimental results show that for a wider interbarrier thickness the PL in the AlGaAs well will decay almost as a single exponential function, and for a thin interbarrier thickness the PL decay in the AlGaAs well is not a single exponential: the decay rate decreases gradually. These results indicate that when the tunneling becomes the main decay process in the AlGaAs well, the "effective mass filtering" phenomenon will be displayed in the PL decay process, which decreases the tunneling rate. At low temperature, the PL decay time increases with the increase of temperature. With further increase of temperature, the PL decay time decreases because of the increase of the tunneling rate and nonradiative recombination coefficient.

中图分类号:  (Quantum wells)

  • 68.65.Fg
73.21.Fg (Quantum wells) 78.55.Cr (III-V semiconductors)