中国物理B ›› 1996, Vol. 5 ›› Issue (3): 185-194.doi: 10.1088/1004-423X/5/3/004

• • 上一篇    下一篇

WHISPERING-GALLERY MODE STRUCTURE IN SEMICONDUCTOR MICRODISK LASERS AND CONTROL OF THE SPONTANEOUS EMISSION FACTOR

陈水莲1, 郭长志2   

  1. (1)Department of Applied Mathematics, Tsinghua University Beijing 100084, China; (2)Department of Physics, Peking University, Beijing 100871, China
  • 收稿日期:1995-03-11 出版日期:1996-03-20 发布日期:1996-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

WHISPERING-GALLERY MODE STRUCTURE IN SEMICONDUCTOR MICRODISK LASERS AND CONTROL OF THE SPONTANEOUS EMISSION FACTOR

GUO CHANG-ZHI (郭长志)a, CHEN SHUI-LIAN (陈水莲)b   

  1. a Department of Physics, Peking University, Beijing 100871, China; b Department of Applied Mathematics, Tsinghua University Beijing 100084, China
  • Received:1995-03-11 Online:1996-03-20 Published:1996-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

PDF (PC)

404

赞

摘要： The mode density and cross-sectional area of whispering-gallery modes of various possible polarizations existing in a microdisk cavity structure have been investigated and compared in some detail. Their variations with the disk thickness and radius have been calculated and the behavior of the spontaneous emission factor controlled by the microdisk structure have been shown. It is found that for a given microdisk thickness, the spontaneous emission factor increases with decreasing microdisk radius, but decreases after passing a maximum value, This non-monotonic behavior has never been noted before by others. The variation of spontaneous emission factor with respect to microdisk thickness also exhibits similar behavior. For a microdisk laser emitting at 1.5 μm wavelength, the enhanced spontaneous emiasion factor can barely exceed 0.2. A device configuration for improving the coupling between the whispering-gallery mode and the active region, and for leading the laser beam out of this high-Q microcavity is proposad, and its feasibility in realizing a thresholdless laser is discussed.

Abstract: The mode density and cross-sectional area of whispering-gallery modes of various possible polarizations existing in a microdisk cavity structure have been investigated and compared in some detail. Their variations with the disk thickness and radius have been calculated and the behavior of the spontaneous emission factor controlled by the microdisk structure have been shown. It is found that for a given microdisk thickness, the spontaneous emission factor increases with decreasing microdisk radius, but decreases after passing a maximum value, This non-monotonic behavior has never been noted before by others. The variation of spontaneous emission factor with respect to microdisk thickness also exhibits similar behavior. For a microdisk laser emitting at 1.5 μm wavelength, the enhanced spontaneous emiasion factor can barely exceed 0.2. A device configuration for improving the coupling between the whispering-gallery mode and the active region, and for leading the laser beam out of this high-Q microcavity is proposad, and its feasibility in realizing a thresholdless laser is discussed.

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)