中国物理B ›› 1994, Vol. 3 ›› Issue (9): 690-696.doi: 10.1088/1004-423X/3/9/006

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

MONTE CARLO SIMULATION OF THE ION BEAM ENHANCED DEPOSITION OF SILICON NITRIDE FILMS

邵其鋆, 潘正瑛   

  1. Department of Physics II, Fudan University, Shanghai 200433, China; Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • 收稿日期:1993-10-25 出版日期:1994-09-20 发布日期:1994-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

MONTE CARLO SIMULATION OF THE ION BEAM ENHANCED DEPOSITION OF SILICON NITRIDE FILMS

SHAO QI-YUN (邵其鋆), PAN ZHENG-YING (潘正瑛)   

  1. Department of Physics II, Fudan University, Shanghai 200433, China; Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • Received:1993-10-25 Online:1994-09-20 Published:1994-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： In this paper, the growth process of silicon nitride films by ion beam enhanced depo-sition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results.

Abstract: In this paper, the growth process of silicon nitride films by ion beam enhanced depo-sition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results.

中图分类号:  (Ion and electron beam-assisted deposition; ion plating)

  • 81.15.Jj
68.55.A- (Nucleation and growth) 68.55.Nq (Composition and phase identification) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 61.72.uf (Ge and Si)