中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47308-047308.doi: 10.1088/1674-1056/19/4/047308
徐岭1, 赵伟明1, 丁宏林1, 马忠元1, 徐骏1, 陈坤基1, 李卫2
Li Wei(李卫)a)b), Xu Ling(徐岭) a)†, Zhao Wei-Ming(赵伟明)a), Ding Hong-Lin(丁宏林)a), Ma Zhong-Yuan(马忠元) a), Xu Jun(徐骏)a), and Chen Kun-Ji(陈坤基)a)
摘要: This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5~nm in diameter were clearly embedded in the SiO2 layer on p-type Si (100). Capacitance--voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8~V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance--time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10$^{4}$~s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.
中图分类号: (Capacitors)