中国物理B ›› 2005, Vol. 14 ›› Issue (3): 615-619.doi: 10.1088/1009-1963/14/3/034

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Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

段淑卿, 谭娜, 张庆瑜   

  1. State Key Laboratory of Materials Modification of Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
  • 收稿日期:2004-09-08 修回日期:2004-11-11 出版日期:2005-03-02 发布日期:2005-03-02
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50240420656)

Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

Duan Shu-Qing (段淑卿), Tan Na (谭娜), Zhang Qing-Yu (张庆瑜)   

  1. State Key Laboratory of Materials Modification of Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
  • Received:2004-09-08 Revised:2004-11-11 Online:2005-03-02 Published:2005-03-02
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50240420656)

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摘要： Er-doped SiOx films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiOx films has been studied and discussed.

关键词: ion beam assisted deposition, Er-doped SiOx film, microstructure, photoluminescence

Abstract: Er-doped SiOx films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiOx films has been studied and discussed.

Key words: ion beam assisted deposition, Er-doped SiOx film, microstructure, photoluminescence

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
78.55.Hx (Other solid inorganic materials) 81.15.Jj (Ion and electron beam-assisted deposition; ion plating) 81.40.Gh (Other heat and thermomechanical treatments) 61.05.cp (X-ray diffraction) 68.37.Lp (Transmission electron microscopy (TEM)) 78.66.Nk (Insulators)