INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

doi:10.1088/1004-423X/3/9/005

中国物理B ›› 1994, Vol. 3 ›› Issue (9): 682-689.doi: 10.1088/1004-423X/3/9/005

INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

宁兆元¹, 吴雪梅¹, 陈俊芳², 程绍玉², 任兆杏², 张束清²

(1)Department of Physics Suzhou University, Suzhou 215006, China; (2)Institute of Plasma Physics, Academia Sinica, Hefei 230031, China

收稿日期:1993-07-22 出版日期:1994-09-20 发布日期:1994-09-20

INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

CHEN JUN-FANG (陈俊芳)^a, CHENG SHAO-YU (程绍玉)^a, REN ZHAO-XING (任兆杏)^a, ZHANG SU-QING (张束清)^a, NING ZHAO-YUAN (宁兆元)^b, WU XUE-MEI (吴雪梅)^b

^a Institute of Plasma Physics, Academia Sinica, Hefei 230031, China ^b Department of Physics Suzhou University, Suzhou 215006, China;

Received:1993-07-22 Online:1994-09-20 Published:1994-09-20

摘要/Abstract

摘要： In this paper, the effect of temperature on the composition and structure of the Si₃N₄ thin film is investigated. X-ray diffraction pattern and transmission electron microscope (TEM) analyses show that the Si₃N₄ film undergoes the transition from amorphous to crystalline phase with increasing deposition temperature. Infra-red qualitative analysis shows that the content of hydrogen decreases with increasing deposition temperature.The stoichiometric of Si₃N₄ is investigated by X-ray photoelectron spectroscopy or electron spectroscopy for chemical analysis.

Abstract: In this paper, the effect of temperature on the composition and structure of the Si₃N₄ thin film is investigated. X-ray diffraction pattern and transmission electron microscope (TEM) analyses show that the Si₃N₄ film undergoes the transition from amorphous to crystalline phase with increasing deposition temperature. Infra-red qualitative analysis shows that the content of hydrogen decreases with increasing deposition temperature.The stoichiometric of Si₃N₄ is investigated by X-ray photoelectron spectroscopy or electron spectroscopy for chemical analysis.

中图分类号: (Composition and phase identification)

68.55.Nq

68.55.A- (Nucleation and growth) 68.55.-a (Thin film structure and morphology) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 61.50.Nw (Crystal stoichiometry)

陈俊芳, 程绍玉, 任兆杏, 张束清, 宁兆元, 吴雪梅. INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD[J]. 中国物理B, 1994, 3(9): 682-689.

CHEN JUN-FANG (陈俊芳), CHENG SHAO-YU (程绍玉), REN ZHAO-XING (任兆杏), ZHANG SU-QING (张束清), NING ZHAO-YUAN (宁兆元), WU XUE-MEI (吴雪梅). INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD[J]. Acta Physica Sinica (Overseas Edition), 1994, 3(9): 682-689.

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INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

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