中国物理B ›› 1993, Vol. 2 ›› Issue (8): 619-629.doi: 10.1088/1004-423X/2/8/008

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    

FRANZ-KELDYSH OSCILLATION FROM THE SPACE CHARGE REGION OF MBE GaAs FILMS

潘士宏1, 王忠和1, 刘毅1, 张存洲1, 周小川2, 蒋健2, 徐贵昌2   

  1. (1)Department of Physics, Nankai University Tianjin 300071, China; (2)Laboratory for Surface Physics, Academia Sinica, Beijing 100080, China
  • 收稿日期:1992-10-12 出版日期:1993-08-20 发布日期:1993-08-20
  • 基金资助:
    Project supported in part by the National Laboratory of Semiconductor Supaerlattices.

FRANZ-KELDYSH OSCILLATION FROM THE SPACE CHARGE REGION OF MBE GaAs FILMS

PAN SHI-HONG (潘士宏)a, WANG ZHONG-HE (王忠和)a, LIU YI (刘毅)a, ZHANG CUN-ZHOU (张存洲)a, ZHOU XIAO-CHUAN (周小川)b, JIANG JIAN (蒋健)b, XU GUI-CHANG (徐贵昌)b   

  1. a Department of Physics, Nankai University Tianjin 300071, China; b Laboratory for Surface Physics, Academia Sinica, Beijing 100080, China
  • Received:1992-10-12 Online:1993-08-20 Published:1993-08-20
  • Supported by:
    Project supported in part by the National Laboratory of Semiconductor Supaerlattices.

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摘要： We have investigated doped MBE GaAs films using photoreflectance (PR) spec-troscopy. Special spectral structures have been observed in the vicinity of the funda-mental band gap, which are quite different from the Franz-Keldysh oscillation (FKO) from uniform electric fields under flatband modulations. Numerical analysis has been performed for FKO from electric fields in the space charge region under non-flatband modulations. Some typical FKO line shapes are illustrated. For moderately doped samples the calculated line shapes are basically consistent with experiments. The surface electric field and the Fermi level pinning have also been deduced from exper-iments.

Abstract: We have investigated doped MBE GaAs films using photoreflectance (PR) spec-troscopy. Special spectral structures have been observed in the vicinity of the funda-mental band gap, which are quite different from the Franz-Keldysh oscillation (FKO) from uniform electric fields under flatband modulations. Numerical analysis has been performed for FKO from electric fields in the space charge region under non-flatband modulations. Some typical FKO line shapes are illustrated. For moderately doped samples the calculated line shapes are basically consistent with experiments. The surface electric field and the Fermi level pinning have also been deduced from exper-iments.

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
71.20.Nr (Semiconductor compounds) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))