Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

doi:10.1088/1674-1056/ab9738

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/ab9738

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进)

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

收稿日期:2020-04-22 修回日期:2020-05-21 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜)¹, Yan Shao(邵龑)^1,2, Xiao-Lin Wang(王晓琳)¹, Xiaohan Wu(吴小晗)¹, Wen-Jun Liu(刘文军)¹, Shi-Jin Ding(丁士进)¹

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

Received:2020-04-22 Revised:2020-05-21 Online:2020-07-05 Published:2020-07-05
Contact: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

摘要/Abstract

摘要： Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX₃ (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 10³A·W^-1, an excellent detectivity in the order of 10¹⁶ Jones, and a light-to-dark current ratio up to 10⁵ under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

Abstract: Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX₃ (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 10³A·W^-1, an excellent detectivity in the order of 10¹⁶ Jones, and a light-to-dark current ratio up to 10⁵ under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

Key words: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

81.07.Ta (Quantum dots) 85.30.Tv (Field effect devices) 81.05.Gc (Amorphous semiconductors)

张美娜, 邵龑, 王晓琳, 吴小晗, 刘文军, 丁士进. Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels[J]. 中国物理B, 2020, 29(7): 78503-078503.

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进). Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels[J]. Chin. Phys. B, 2020, 29(7): 78503-078503.

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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

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