Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

doi:10.1088/1674-1056/ab8abc

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 76103-076103.doi: 10.1088/1674-1056/ab8abc

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚)

1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

收稿日期:2020-01-12 修回日期:2020-04-07 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Bingsheng Li E-mail:libingshengmvpmvp@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141).

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

Qing Liao(廖庆)¹, Bingsheng Li(李炳生)¹, Long Kang(康龙)², Xiaogang Li(李小刚)²

1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Received:2020-01-12 Revised:2020-04-07 Online:2020-07-05 Published:2020-07-05
Contact: Bingsheng Li E-mail:libingshengmvpmvp@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141).

摘要/Abstract

摘要： The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.

关键词: He implantation, cavities, extended defects, transmission electron microscopy, recrystallization

Abstract: The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.

Key words: He implantation, cavities, extended defects, transmission electron microscopy, recrystallization

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

61.80.Jh (Ion radiation effects) 68.37.Lp (Transmission electron microscopy (TEM)) 78.40.Fy (Semiconductors)

廖庆, 李炳生, 康龙, 李小刚. Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃[J]. 中国物理B, 2020, 29(7): 76103-076103.

Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚). Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃[J]. Chin. Phys. B, 2020, 29(7): 76103-076103.

参考文献 30

[1]	Wesch W 1996 Nucl. Instrum. Methods Phys. Res. B 116 305 doi: 10.1016/0168-583X(96)00065-1
[2]	Wang K, Doerner R P, Baldwin M J and Parish C M 2018 J. Nucl. Mater. 509 679 doi: 10.1016/j.jnucmat.2018.07.043
[3]	Qian G, Lei W S, Niffenegger M and Gonzalez V F 2018 Philos. Mag. 98 959 doi: 10.1080/14786435.2018.1425011
[4]	Katoh Y, Snead L L, Szlufarska I and Weber W J 2012 Curr. Opin. Solid State Mater. Sci. 16 143 doi: 10.1016/j.cossms.2012.03.005
[5]	Sun J J, Li B S, You Y W, Hou J, Xu Y C, Liu C S, Fang Q F and Wang Z G 2018 J. Nucl. Mater. 503 271 doi: 10.1016/j.jnucmat.2018.03.010
[6]	Snead L L, Nozawa T, Katoh Y, Byun T S, Kondo S and Petti D A 2007 J. Nucl. Mater. 371 329 doi: 10.1016/j.jnucmat.2007.05.016
[7]	Chen J, Jung P and Ullmaier H 2005 J. Nucl. Mater. 336 194 doi: 10.1016/j.jnucmat.2004.09.014
[8]	Daghbouj N, Li B S, Karlik M and Declemy A 2019 Appl. Surf. Sci. 466 141 doi: 10.1016/j.apsusc.2018.10.005
[9]	Li B S, Wang Z G, Wei K F, Shen T L, Yao C F, Zhang H P, Lu X R and Han W T 2019 Fusion Eng. 142 6 doi: 10.1016/j.fusengdes.2019.04.049
[10]	Alquier D, Bongiorno C, Roccaforte F and Raineri V 2005 Appl. Phys. Lett. 86 211911 doi: 10.1063/1.1940121
[11]	Cherkashin, Daghbouj N, Seine G, Claverie A 2018 J. Appl. Phys. 123 161556 doi: 10.1063/1.5012505
[12]	Daghbouj N, Cherkashin N, Darras F X, Paillard V, Fnaiech M, Claverie A 2016 J. Appl. Phys. 119 135308 doi: 10.1063/1.4945032
[13]	Li B S, Du Y Y and Wang Z G 2015 Nucl. Instrum. Methods Phys. Res. B 345 53 doi: 10.1016/j.nimb.2014.12.049
[14]	Li B S, Liu H P, Xu L J, Wang J, Song J, Peng D P, Li J H, Zhao F Q, Kang L, Zhang T M, Tang H X and Xiong An L 2020 Appl. Surf. Sci. 499 143911 doi: 10.1016/j.apsusc.2019.143911
[15]	Liu Y Z, Li B S and Zhang L 2017 Chin. Phys. Lett. 34 052801 doi: 10.1088/0256-307X/34/5/052801
[16]	Zhang C H, Donnelly S E, Vishnyakov V M and Evans J H 2003 J. Appl. Phys. 94 6017 doi: 10.1063/1.1611630
[17]	Chen J, Jung P and Trinkaus H 2000 Phys. Rev. B 61 12923 doi: 10.1103/PhysRevB.61.12923
[18]	Shen Q, Zhou W, Ran G, Li R X, Feng Q J and Li N 2017 Materials 10 101 doi: 10.3390/ma10020101
[19]	Han W T and Li B S 2018 J. Nucl. Mater. 504 161 doi: 10.1016/j.jnucmat.2018.03.038
[20]	Daghbouj N, Li B S, Callisti M, Sen H S, Karlik M and Polcar T 2019 Acta Mater. 181 160 doi: 10.1016/j.actamat.2019.09.027
[21]	Dahbouj N, Li B S, Callisti M, Sen H S, Lin J, Ou X, Karlik M, Tolcar T 2020 Acta Mater. 188 609 doi: 10.1016/j.actamat.2020.02.046
[22]	Ziegler J F, Ziegler M D and Biersack J P 2010 Nucl. Instr. Method B 268 1818 doi: 10.1016/j.nimb.2010.02.091
[23]	Bae In-Tae, Ishimaru M, Hirotsu Y and Sickafus K E 2004 J. Appl. Phys. 96 1451 doi: 10.1063/1.1766093
[24]	Gao F, Devanathan R, Zhang Y, Posselt M and Weber W J 2006 J. Mater. Res. 21 1420 doi: 10.1557/jmr.2006.0176
[25]	Harada S, Ishimaru M, Motooka T, Nakata T, Yoneda T and Inoue M 1996 Appl. Phys. Lett. 69 3534 doi: 10.1063/1.117236
[26]	Heera V, Kogler R, Skorupa W and Stoemenos J 1995 Appl. Phys. Lett. 67 1999 doi: 10.1063/1.114766
[27]	Oliviero E, Beaufort M F and Barbot J F 2003 J. Appl. Phys. 93 231 doi: 10.1063/1.1527974
[28]	Gao F, Weber W J, Posselt M and Belko V 2004 Phy. Rev. B 69 245205 doi: 10.1103/PhysRevB.69.245205
[29]	Xi J Q, Liu B, Yuan F L, Zhang Y W and Weber W J 2017 Scr. Mater. 139 1
[30]	Li B S, Liu H P, Shen T L, Xu L J, Wang J, Zhao F Q, Peng D P, Li J H, Sheng Y B and Xiong A L 2020 J. Eur. Cera. Soc. 40 1014 doi: 10.1016/j.jeurceramsoc.2019.11.026

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 30

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Shu-Fang Ma(马淑芳), Lei Li(李磊), Qing-Bo Kong(孔庆波), Yang Xu(徐阳), Qing-Ming Liu(刘青明), Shuai Zhang(张帅), Xi-Shu Zhang(张西数), Bin Han(韩斌), Bo-Cang Qiu(仇伯仓), Bing-She Xu(许并社), and Xiao-Dong Hao(郝晓东). Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2023, 32(3): 37801-037801.
[2]	Zi-Hao Zhu(朱子豪), Bo-Yun Wang(王波云), Xiang Yan(闫香), Yang Liu(刘洋), Qing-Dong Zeng(曾庆栋), Tao Wang(王涛), and Hua-Qing Yu(余华清). Dynamically tunable multiband plasmon-induced transparency effect based on graphene nanoribbon waveguide coupled with rectangle cavities system[J]. 中国物理B, 2022, 31(8): 84210-084210.
[3]	Yang Gao(高阳), Jingyan Zhang(张静言), Pengwei Dou(窦鹏伟), Zhuolin Li(李卓霖), Zhaozhao Zhu(朱照照), Yaqin Guo(郭雅琴), Chaoqun Hu(胡超群), Weidu Qin(覃维都), Congli He(何聪丽), Shipeng Shen(申世鹏), Ying Zhang(张颖), and Shouguo Wang(王守国). Non-volatile multi-state magnetic domain transformation in a Hall balance[J]. 中国物理B, 2022, 31(6): 67502-067502.
[4]	Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Enhanced single photon emission in silicon carbide with Bull's eye cavities[J]. 中国物理B, 2022, 31(10): 104206-104206.
[5]	Xin Liang(梁信), Hua Zhou(周华), Hui-Qiong Wang(王惠琼), Lihua Zhang(张丽华), Kim Kisslinger, and Junyong Kang(康俊勇). Nanoscale structural investigation of Zn_1-xMg_xO alloy films on polar and nonpolar ZnO substrates with different Mg contents[J]. 中国物理B, 2021, 30(9): 96107-096107.
[6]	Zheng Han(韩铮), Xu Wang(王旭), Jiao Wang(王娇), Qing Liao(廖庆), and Bingsheng Li(李炳生). Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing[J]. 中国物理B, 2021, 30(8): 86107-086107.
[7]	Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Understanding the synergistic effect of mixed solvent annealing on perovskite film formation[J]. 中国物理B, 2021, 30(6): 68103-068103.
[8]	Zhen Yang(杨振), Junyuan Yang(杨浚源), Qing Liao(廖庆), Shuai Xu(徐帅), and Bingsheng Li(李炳生). Effect of helium concentration on irradiation damage of Fe-ion irradiated SIMP steel at 300 ℃ and 450 ℃[J]. 中国物理B, 2021, 30(5): 56107-056107.
[9]	Hongyu Zhang(张红钰), Wen Zhao(赵闻), Yaotian Liu(刘耀天), Jiali Chen(陈佳丽), Xinyue Wang(王欣月), and Cuicui Lu(路翠翠). Photonic-plasmonic hybrid microcavities: Physics and applications[J]. 中国物理B, 2021, 30(11): 117801-117801.
[10]	黄艳萍, 黄晓丽, 王鑫, 张文亭, 周迪, 周强, 刘冰冰, 崔田. Structural transitions in NaNH₂ via recrystallization under high pressure[J]. 中国物理B, 2019, 28(9): 96402-096402.
[11]	宋晨之, 杨是赜, 李晓敏, 李晓, 冯济, 潘安练, 王文龙, 许智, 白雪冬. Optically manipulated nanomechanics of semiconductor nanowires[J]. 中国物理B, 2019, 28(5): 54204-054204.
[12]	吴子若, 蔡燕妮, 王星睿, 张龙飞, 邓晓, 程鑫彬, 李同保. Amorphous Si critical dimension structures with direct Si lattice calibration[J]. 中国物理B, 2019, 28(3): 30601-030601.
[13]	刘三姐, 何荧峰, 卫会云, 仇鹏, 宋祎萌, 安运来, 阿布度, 拉赫曼, 彭铭曾, 郑新和. PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces[J]. 中国物理B, 2019, 28(2): 26801-026801.
[14]	汤益丹, 刘新宇, 周正东, 白云, 李诚瞻. Defects and electrical properties in Al-implanted 4H-SiC after activation annealing[J]. 中国物理B, 2019, 28(10): 106101-106101.
[15]	仝毓昕, 张庆华, 谷林. Scanning transmission electron microscopy: A review of high angle annular dark field and annular bright field imaging and applications in lithium-ion batteries[J]. 中国物理B, 2018, 27(6): 66107-066107.