中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48504-048504.doi: 10.1088/1674-1056/27/4/048504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯)   

  1. 1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
    2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China
  • 收稿日期:2017-11-02 修回日期:2018-01-18 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Zhi-Nong Yu E-mail:znyu@bit.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li(栗旭阳)1, Zhi-Nong Yu(喻志农)1, Jin Cheng(程锦)1, Yong-Hua Chen(陈永华)1, Jian-She Xue(薛建设)2, Jian Guo(郭建)1,2, Wei Xue(薛唯)1   

  1. 1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
    2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China
  • Received:2017-11-02 Revised:2018-01-18 Online:2018-04-05 Published:2018-04-05
  • Contact: Zhi-Nong Yu E-mail:znyu@bit.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).

摘要: In this study, indium oxide (In2O3) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (Ta ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μsat) and a negative shift in the threshold voltage (VTH). The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm2/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm2/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.

关键词: water-based process, alkoxide-based process, annealing temperature, thin-film transistors

Abstract: In this study, indium oxide (In2O3) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (Ta ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μsat) and a negative shift in the threshold voltage (VTH). The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm2/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm2/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.

Key words: water-based process, alkoxide-based process, annealing temperature, thin-film transistors

中图分类号:  (Field effect devices)

  • 85.30.Tv
78.40.Fy (Semiconductors) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)