GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

doi:10.1088/1674-1056/24/1/018501

中国物理B ›› 2015, Vol. 24 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/24/1/018501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

赵连锋, 谭桢, 王敬, 许军

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

收稿日期:2014-05-20 修回日期:2014-07-08 出版日期:2015-01-05 发布日期:2015-01-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军)

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:2014-05-20 Revised:2014-07-08 Online:2015-01-05 Published:2015-01-05
Contact: Xu Jun E-mail:junxu@tsinghua.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).

摘要/Abstract

摘要：

GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al₂O₃ gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

关键词: GaSb, metal-oxide-semiconductor field-effect transistor, temperature dependent characteristics, drain leakage current

Abstract:

Key words: GaSb, metal-oxide-semiconductor field-effect transistor, temperature dependent characteristics, drain leakage current

中图分类号: (Field effect devices)

85.30.Tv

81.05.Ea (III-V semiconductors) 77.55.dj (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))

赵连锋, 谭桢, 王敬, 许军. GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics[J]. 中国物理B, 2015, 24(1): 18501-018501.

Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军). GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics[J]. Chin. Phys. B, 2015, 24(1): 18501-018501.

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GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

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