Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

doi:10.1088/1674-1056/23/8/086104

›› 2014, Vol. 23 ›› Issue (8): 86104-086104.doi: 10.1088/1674-1056/23/8/086104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

耿超^{a b}, 习凯^{a b}, 刘天奇^{a b}, 古松^{a b}, 刘杰^a

a Institute of Modern Physiscs, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2013-10-11 修回日期:2014-01-25 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Geng Chao (耿超)^{a b}, Xi Kai (习凯)^{a b}, Liu Tian-Qi (刘天奇)^{a b}, Gu Song (古松)^{a b}, Liu Jie (刘杰)^a

a Institute of Modern Physiscs, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100190, China

Received:2013-10-11 Revised:2014-01-25 Online:2014-08-15 Published:2014-08-15
Contact: Geng Chao, Liu Jie E-mail:gengchao@impcas.ac.cn;j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

摘要/Abstract

摘要： Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of ²⁰⁹Bi have a wider distribution of energy deposition than ¹³²Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

关键词: ion-velocity, single event upset, deposited energy, traversed time

Abstract: Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of ²⁰⁹Bi have a wider distribution of energy deposition than ¹³²Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

Key words: ion-velocity, single event upset, deposited energy, traversed time

中图分类号: (Semiconductors)

61.82.Fk

95.75.-z (Observation and data reduction techniques; computer modeling and simulation) 24.10.Lx (Monte Carlo simulations (including hadron and parton cascades and string breaking models))

耿超, 习凯, 刘天奇, 古松, 刘杰. Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect[J]. , 2014, 23(8): 86104-086104.

Geng Chao (耿超), Xi Kai (习凯), Liu Tian-Qi (刘天奇), Gu Song (古松), Liu Jie (刘杰). Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect[J]. Chin. Phys. B, 2014, 23(8): 86104-086104.

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Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

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