›› 2014, Vol. 23 ›› Issue (8): 86201-086201.doi: 10.1088/1674-1056/23/8/086201

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇    下一篇

Microwave ferromagnetic properties of as-deposited Co2FeSi Heusler alloy films prepared by oblique sputtering

曹晓琴a, 李山东a b c, 蔡志义a, 杜洪磊b, 薛倩b, 高小洋b, 谢施名b   

  1. a Department of Physics, Fujian Normal University, Fuzhou 350000, China;
    b College of Physics Science, Qingdao University, Qingdao 266071, China;
    c National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2013-09-04 修回日期:2013-12-19 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11074040) and the Key Project of Department of Science and Technology of Shangdong Province of China (Grant No. ZR2012FZ006).

Microwave ferromagnetic properties of as-deposited Co2FeSi Heusler alloy films prepared by oblique sputtering

Cao Xiao-Qin (曹晓琴)a, Li Shan-Dong (李山东)a b c, Cai Zhi-Yi (蔡志义)a, Du Hong-Lei (杜洪磊)b, Xue Qian (薛倩)b, Gao Xiao-Yang (高小洋)b, Xie Shi-Ming (谢施名)b   

  1. a Department of Physics, Fujian Normal University, Fuzhou 350000, China;
    b College of Physics Science, Qingdao University, Qingdao 266071, China;
    c National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2013-09-04 Revised:2013-12-19 Online:2014-08-15 Published:2014-08-15
  • Contact: Li Shan-Dong E-mail:dylsd007@163.com,lishd@qdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11074040) and the Key Project of Department of Science and Technology of Shangdong Province of China (Grant No. ZR2012FZ006).

摘要: The Co2FeSi films are deposited on Si (100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co2FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe-330 Oe (1 Oe=79.5775 A·m-1), and low coercivities in a range of 5 Oe-28 Oe. As a result, high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films. These results indicate that Co2FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.

关键词: microwave ferromagnetic performances, oblique sputtering, ferromagnetic resonance, Heusler alloy

Abstract: The Co2FeSi films are deposited on Si (100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co2FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe-330 Oe (1 Oe=79.5775 A·m-1), and low coercivities in a range of 5 Oe-28 Oe. As a result, high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films. These results indicate that Co2FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.

Key words: microwave ferromagnetic performances, oblique sputtering, ferromagnetic resonance, Heusler alloy

中图分类号:  (High-frequency properties, responses to resonant or transient (time-dependent) fields)

  • 62.25.Fg
75.70.-i (Magnetic properties of thin films, surfaces, and interfaces) 75.30.Gw (Magnetic anisotropy) 71.55.Ak (Metals, semimetals, and alloys)