中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1097-1100.doi: 10.1088/1009-1963/16/4/039

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A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

曹全君, 张义门, 张玉明, 吕红亮, 王悦湖, 常远程, 汤晓燕   

  1. Microelectronics Institute of Xidian University, Key Laboratory of Wide Bandgap Semiconductor Material and Device of Education Ministry, Xi'an 710071, China
  • 收稿日期:2006-06-15 修回日期:2006-09-07 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the National Defense Basic Research Program (Grant No 51327010101).

A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Lü Hong-Liana(吕红亮), Wang Yue-Hu(王悦湖), Chang Yuan-Cheng(常远程), and Tang Xiao-Yan(汤晓燕)   

  1. Microelectronics Institute of Xidian University, Key Laboratory of Wide Bandgap Semiconductor Material and Device of Education Ministry, Xi'an 710071, China
  • Received:2006-06-15 Revised:2006-09-07 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the National Defense Basic Research Program (Grant No 51327010101).

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摘要： This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field Effect Transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE (power added efficiency), output power and gain.

关键词: 4H-SiC MESFET, drain current model, CAD, large signal

Abstract: This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field Effect Transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE (power added efficiency), output power and gain.

Key words: 4H-SiC MESFET, drain current model, CAD, large signal

中图分类号:  (Circuit theory)

  • 84.30.Bv
85.30.Tv (Field effect devices) 71.20.Nr (Semiconductor compounds)