中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1125-1128.doi: 10.1088/1009-1963/16/4/044

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Light induced microstructure transformation in a-Si:H films

丁毅1, 贺德衍1, 刘国汉2, 张文理3, 陈光华3, 邓金祥3   

  1. (1)School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; (2)School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China sjb)Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China ; (3)The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China
  • 收稿日期:2006-05-23 修回日期:2006-08-24 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No G2000028201).

Light induced microstructure transformation in a-Si:H films

Liu Guo-Han(刘国汉)a)b), Ding Yi(丁毅)a), Zhang Wen-Li(张文理)c), Chen Guang-Hua(陈光华)c)†, He De-Yan(贺德衍)a), and Deng Jin-Xiang(邓金祥)c)   

  1. a School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China; c The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China
  • Received:2006-05-23 Revised:2006-08-24 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No G2000028201).

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摘要： A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.

关键词: hydrogenated amorphous silicon, Staebler--Wronski effect, microwave electron cyclotron resonant chemical vapour deposition

Abstract: A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.

Key words: hydrogenated amorphous silicon, Staebler--Wronski effect, microwave electron cyclotron resonant chemical vapour deposition

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.30.Ly (Disordered solids) 78.66.Jg (Amorphous semiconductors; glasses)