中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1150-1154.doi: 10.1088/1009-1963/16/4/049
王建, 张文栋, 薛晨阳, 熊继军, 刘俊, 谢斌
Wang Jian(王建)†, Zhang Wen-Dong(张文栋), Xue Chen-Yang(薛晨阳), Xiong Ji-Jun(熊继军), Liu Jun(刘俊), and Xie Bin(谢斌)
摘要: This paper reports the current--voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [1\bar{1}0] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1\bar{1}0] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1\bar{1}0] stresses and the linear sensitivities are up to 0.69mV/MPa, -0.69mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37mV/kPa.
中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))