Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

doi:10.1088/1674-1056/ae0397

中国物理B ›› 2025, Vol. 34 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/ae0397

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

Pengfei Shao(邵鹏飞)¹, Yifan Cheng (成毅凡)¹, Yu Liu(柳裕)¹, Qi Yao(姚齐)¹, Zanjiang Qiao(乔赞江)¹, Yanghu Peng (彭扬虎)¹, Qin Cai(蔡青)¹, Tao Tao(陶涛)¹, Zili Xie(谢自力)¹, Dunjun Chen(陈敦军)¹, Bin Liu(刘斌)¹, Rong Zhang(张荣)^1,2, and Ke Wang(王科)^1,†

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications, Xiamen University, Xiamen 361005, China

收稿日期:2025-06-03 修回日期:2025-08-05 接受日期:2025-09-05 发布日期:2025-11-06
基金资助:
This work was supported by the National Key Research and Development Program of China (Grant No. 2024YFE0205000), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20243037), the National Natural Science Foundation of China (Grant Nos. 62074077 and 61921005), the Postdoctoral Fellowship Program of CPSF (Grant No. GZC20231098), and the Collaborative Innovation Center of Solid State Lighting and Energy- Saving Electronics.

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications, Xiamen University, Xiamen 361005, China

Received:2025-06-03 Revised:2025-08-05 Accepted:2025-09-05 Published:2025-11-06
Contact: Ke Wang E-mail:kewang@nju.edu.cn
Supported by:
This work was supported by the National Key Research and Development Program of China (Grant No. 2024YFE0205000), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20243037), the National Natural Science Foundation of China (Grant Nos. 62074077 and 61921005), the Postdoctoral Fellowship Program of CPSF (Grant No. GZC20231098), and the Collaborative Innovation Center of Solid State Lighting and Energy- Saving Electronics.

摘要/Abstract

摘要： Polarization-induced two-dimensional hole gases (2DHG) in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors. This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations. It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K, whereas at 77 K, the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface. The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface, exhibiting a high sheet density of 2.2×10¹³ cm^-2 and a mobility of 16.2 cm²·V^-1·s^-1 at 300 K. The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm. However, for p-GaN layers thinner than 30 nm, the 2DHG sheet density strongly depends on the p-GaN thickness, which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.

关键词: gallium nitride, two-dimensional hole gases, transport property, GaN/AlGaN/GaN heterostructure

Abstract: Polarization-induced two-dimensional hole gases (2DHG) in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors. This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations. It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K, whereas at 77 K, the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface. The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface, exhibiting a high sheet density of 2.2×10¹³ cm^-2 and a mobility of 16.2 cm²·V^-1·s^-1 at 300 K. The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm. However, for p-GaN layers thinner than 30 nm, the 2DHG sheet density strongly depends on the p-GaN thickness, which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.

Key words: gallium nitride, two-dimensional hole gases, transport property, GaN/AlGaN/GaN heterostructure

中图分类号: (III-V semiconductors)

73.61.Ey

Pengfei Shao(邵鹏飞), Yifan Cheng (成毅凡), Yu Liu(柳裕), Qi Yao(姚齐), Zanjiang Qiao(乔赞江), Yanghu Peng (彭扬虎), Qin Cai(蔡青), Tao Tao(陶涛), Zili Xie(谢自力), Dunjun Chen(陈敦军), Bin Liu(刘斌), Rong Zhang(张荣), and Ke Wang(王科). Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure[J]. 中国物理B, 2025, 34(11): 117301-117301.

参考文献

[1] Khan M A, Kuznia J, Hove J V, Pan N and Carter J 1992 Appl. Phys. Lett. 60 3027
[2] Khan M A, Bhattarai A, Kuznia J and Olson D 1993 Appl. Phys. Lett. 63 1214
[3] Ambacher O, Smart J, Shealy J,Weimann N, Chu K, Murphy M, Schaff W, Eastman L, Dimitrov R and Wittmer L 1999 J. Appl. Phys. 85 3222
[4] Mishra U K, Shen L, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
[5] Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
[6] Zhang H C, Liang F Z, Song K, Xing C, Wang D H, Yu H B, Huang C, Sun Y, Yang L, Zhao X L, Sun H D and Long S B 2021 Appl. Phys. Lett. 118 242105
[7] Zhang H C, Liang F Z, Yang L, Gao Z X, Liang K, Liu S, Ye Y K, Yu H B, Chen W, Kang Y and Sun H D 2024 Adv. Mater. 36 2405874
[8] Then H W, Radosavljevic M, Koirala P, et al. 2022 IEEE International Electron Devices Meeting 3511
[9] Jiang X, Li C H, Yang S X, Liang J H, Lai L K, Dong Q Y, Huang W, Liu X Y and Luo W J 2023 Chin. Phys. B 32 037201
[10] Hughes B, Chu R, Lazar J and Boutros K 2015 IEEE International Electron Devices Meeting 1671
[11] Hahn H, Reuters B, Pooth A, Noculak A, Kalisch H and Vescan A 2013 Jpn. J. Appl. Phys. 52 128001
[12] Nomoto K, Chaudhuri R, Bader S J, Li L, Hickman A, Huang S, Lee H, Maeda T, Then H W, Radosavljevic M, Fischer P, Molnar A, Hwang J C M, Xing H G and Jena D 2020 IEEE International Electron Devices Meeting 163
[13] Raj A, Krishna A, Romanczyk B, Hatui N, LiuW, Keller S and Mishra U K 2023 IEEE Electron Device Lett. 44 9
[14] Chen K J, Wei J, Tang G, Xu H, Zheng Z, Zhang L and Song W 2020 IEEE International Electron Devices Meeting 2711
[15] Kinzer D 2020 IEEE International Electron Devices Meeting 2751
[16] Niu X R, Hou B, Zhang M, Yang L, Wu M, Zhang X C, Jia F C, Wang C, Ma X H and Hao Y 2023 Chin. Phys. B 32 108101
[17] Zheng Z Y, Song W J, Zhang L, Yang S, Wei J and Chen K J 2020 IEEE Electron Device Lett. 41 26
[18] Yu J J, Wei J, Yang J J, Li T, Yang H, Song Y M, Cui J W, Liu S H, Yang X L, Wang M J and Shen B 2025 IEEE Electron Device Lett. 46 139
[19] Yang C, Fu H Q, Peri P, Fu K, Yang T H, Zhou J G, Montes J, Smith D J and Zhao Y J 2021 IEEE Electron Device Lett. 42 1128
[20] Zhang K, Sumiya M, Liao M, Koide Y and Sang L 2016 Sci. Rep. 6 23683
[21] Reuters B, Hahn H, Pooth A, Hollander B, Breuer U, Heuken M, Kalisch H and Vescan A 2014 J. Phys. D: Appl. Phys. 47 175103
[22] Beckmann C, Wieben J, Thorsten Z, Kirchbrücher A, Ehrler J, Stamm R, Yang Z N, Kalisch H and Vescan A 2022 J. Phys. D: Appl. Phys. 55 435102
[23] Zhang Z X, Encomendero J, Chaudhuri R, Cho Y J, Protasenko V, Nomoto K, Lee K, Toita M, Xing H G and Jena D 2021 Appl. Phys. Lett. 119 162104
[24] Chaudhuri R, Bader S J, Chen Z, Muller D A, Xing H G and Jena D 2019 Science 365 1454
[25] Nakajima A, Liu P C, Ogura M, Makino T, Kakushima K, Nishizawa S, Ohashi H, Yamasaki S and Iwai H 2014 J. Appl. Phys. 115 153707
[26] Shao P F, Fan X, Li S Q, Chen S L, Zhou H, Liu H, Guo H, Xu W Z, Tao T, Xie Z L, Lu H,Wang K, Liu B, Chen D J, Zheng Y D and Zhang R 2023 Appl. Phys. Lett. 122 142102
[27] Su H, Zhang T, Xu S, Tao H, Zhang J and Hao Y 2023 IEEE Electron Device Lett. 44 1939
[28] Zhang Y, Sun Z, Wang W, Liang Y, Cui M, Zhao Y, Wen H and Liu W 2023 IEEE Trans. Electron Devices 70 31
[29] Li T, Zhang M, Yu J, Cui J, Yang J, Wu Y, Yang H, Zhang Y, Yang X, Wang M, Feng S, Shen B andWei J 2024 IEEE Trans. Electron Devices 71 2361
[30] Li Z H, Shao P F, Shi G J, Wu Y Z, Wang Z P, Li S Q, Zhang D Q, Tao T, Xu Q J, Xie Z L, Ye J D, Chen D J, Liu B, Wang K, Zheng Y D and Zhang R 2020 Chin. Phys. B 31 018102
[31] Ng Y H, Zheng Z Y, Zhang L, Liu R Z, Chen T, Feng S R, Shao Q M and Chen K J 2023 Appl. Phys. Lett. 123 142106
[32] Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
[33] Zhong Z Y, Ambacher O, Link A, Holy V, Stangl J, Lechner R T, Roch T and Bauer G 2002 Appl. Phys. Lett. 80 3521
[34] Chaudhuri R, Chen Z, Muller D A, Xing H G and Jena D 2021 Jpn. J. Appl. Phys. 130 025703
[35] Hashizume T and Nakasaki R 2002 Appl. Phys. Lett. 80 4564
[36] Köhler K, Wiegert J, Menner H P, Maier M and Kirste L 2008 J. Appl. Phys. 103 023706
[37] Barbet S, Aubry R, Forte-PoissonMA, Jacquet J C, Deresmes D,Mélin T and Théron D 2008 Appl. Phys. Lett. 93 212107

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Zhuo Chen(陈卓), Yuejin Yuan(袁越锦), Wenyang Ding(丁文扬), Shouhang Li(李寿航), Meng An(安盟), and Gang Zhang(张刚). Hyperparameter optimization and force error correction of neuroevolution potential for predicting thermal conductivity of wurtzite GaN[J]. 中国物理B, 2025, 34(8): 86110-086110.
[2]	Fuzhou Wen(文福洲), Qianshu Wu(吴千树), Jinwei Zhang(张津玮), Zhuoran Luo(罗卓然), Senyuan Xu(许森源), Hao Jiang(江灏), and Yang Liu(刘扬). Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures[J]. 中国物理B, 2025, 34(7): 77105-077105.
[3]	Zhuoyang Lv(吕卓阳), Guijuan Zhao(赵桂娟), Wanting Wei(魏婉婷), Xiurui Lv(吕秀睿), and Guipeng Liu(刘贵鹏). Band alignment of heterojunctions formed by PtSe₂ with doped GaN[J]. 中国物理B, 2025, 34(4): 47304-047304.
[4]	Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛). Review of a direct epitaxial approach to achieving micro-LEDs[J]. 中国物理B, 2023, 32(1): 18508-018508.
[5]	Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬). Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction[J]. 中国物理B, 2022, 31(4): 47103-047103.
[6]	Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华). Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2022, 31(3): 36103-036103.
[7]	Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.
[8]	Lei Yang(杨蕾), Yan-Peng Song(宋艳鹏), Jun-Jie Wang(王俊杰), Xu Chen(陈旭), Hui-Jing Du(杜会静), and Jian-Gang Guo(郭建刚). Structural modulation and physical properties of cobalt-doped layered La₂M₅As₃O₂ (M= Cu, Ni) compounds[J]. 中国物理B, 2021, 30(7): 76106-076106.
[9]	张晋兵, 王强, 曹则贤. Effects of water on the structure and transport properties of room temperature ionic liquids and concentrated electrolyte solutions[J]. 中国物理B, 2020, 29(8): 87804-087804.
[10]	阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. 中国物理B, 2020, 29(3): 37201-037201.
[11]	吉雪, 董文秀, 张育民, 王建峰, 徐科. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates[J]. 中国物理B, 2019, 28(6): 67701-067701.
[12]	田志锋, 徐鹏, 余耀, 孙建东, 冯伟, 丁青峰, 孟占伟, 李想, 蔡金华, 郑中信, 李欣幸, 靳琳, 秦华, 孙云飞. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. 中国物理B, 2019, 28(5): 58501-058501.
[13]	侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.
[14]	刘三姐, 何荧峰, 卫会云, 仇鹏, 宋祎萌, 安运来, 阿布度, 拉赫曼, 彭铭曾, 郑新和. PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces[J]. 中国物理B, 2019, 28(2): 26801-026801.
[15]	程立文, 马剑, 曹常锐, 徐作政, 兰天, 杨金彭, 陈海涛, 于洪岩, 吴曙东, 尧舜, 曾祥华, 徐仔全. Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers[J]. 中国物理B, 2018, 27(8): 88504-088504.