中国物理B ›› 2025, Vol. 34 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/add67d
High-performance bilayer IGZO thin-film transistors by sputtering heterojunction with differences in indium elemental content
Longfei Zhang(张龙飞)1, Hanzhe Zhang(张翰哲)2, Yuhang Wang(王宇航)2, Shichen Su(宿世臣)2,†, Xianghu Wang(王相虎)3,‡, Dezhen Shen(申德振)4, and Hai Zhu(朱海)1,§
- 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
2 Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China;
3 School of Materials, Shanghai Dianji University, Shanghai 200245, China;
4 Gusu Laboratory of Materials, Suzhou 215031, China
High-performance bilayer IGZO thin-film transistors by sputtering heterojunction with differences in indium elemental content
Longfei Zhang(张龙飞)1, Hanzhe Zhang(张翰哲)2, Yuhang Wang(王宇航)2, Shichen Su(宿世臣)2,†, Xianghu Wang(王相虎)3,‡, Dezhen Shen(申德振)4, and Hai Zhu(朱海)1,§
- 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
2 Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China;
3 School of Materials, Shanghai Dianji University, Shanghai 200245, China;
4 Gusu Laboratory of Materials, Suzhou 215031, China
摘要： The high-quality semiconductor InGaZnO (IGZO) alloy thin films with different indium (In) elemental contents were deposit utilized magnetron sputtering. The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed, and their performance exhibited significant improvement compared to single layer IGZO TFTs. In the bilayer heterojunction TFT, the field-effect mobility was promoted to 23.5 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, the switching ratio reached 4.1$\times10^{7}$, and the subthreshold swing was reduced to 0.42 V/dec. Moreover, the variation of bilayer TFTs threshold voltage ($V_{\rm th}$) was significantly suppressed, Under positive gate bias stress (PBS) and negative gate bias stress (NBS), the threshold shift is reduced to be 1.5 V and $-1.1 $ V, respectively. The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface, which facilitated the accumulation of channel electrons. Additionally, the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering, thereby the performance properties of TFT were enhancing. The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT, which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.
中图分类号: (Amorphous semiconductors)
- 81.05.Gc