中国物理B ›› 2025, Vol. 34 ›› Issue (9): 96102-096102.doi: 10.1088/1674-1056/add4f6

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Pressure-induced amorphization and metallization in orthorhombic SiP

Qiru Zeng(曾琪茹)1, Youjun Zhang(张友君)1, Yukai Zhuang(庄毓凯)1, Linfei Yang(杨林飞)2, Qiming Wang(王齐明)1,†, and Yi Sun(孙熠)2,‡   

  1. 1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    2 School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China
  • 收稿日期:2025-02-16 修回日期:2025-04-28 接受日期:2025-05-07 出版日期:2025-08-21 发布日期:2025-09-15
  • 通讯作者: Qiming Wang, Yi Sun E-mail:qmwang@scu.edu.cn;sunyi@jcu.edu.cn
  • 基金资助:
    crystal-to-amorphous transition|metallization|layered semiconductors|high pressure

Pressure-induced amorphization and metallization in orthorhombic SiP

Qiru Zeng(曾琪茹)1, Youjun Zhang(张友君)1, Yukai Zhuang(庄毓凯)1, Linfei Yang(杨林飞)2, Qiming Wang(王齐明)1,†, and Yi Sun(孙熠)2,‡   

  1. 1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    2 School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China
  • Received:2025-02-16 Revised:2025-04-28 Accepted:2025-05-07 Online:2025-08-21 Published:2025-09-15
  • Contact: Qiming Wang, Yi Sun E-mail:qmwang@scu.edu.cn;sunyi@jcu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 42150102) and the Sichuan Science and Technology Program (Grant No. 2023NSFSC1910).

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摘要： Amorphous states of two-dimensional (2D) materials frequently exhibit remarkable physical properties that differ significantly from their crystalline counterparts. Typically, metastable amorphous states can be achieved through rapid quenching from high temperatures. However, the heating process is detrimental to the structural integrity of 2D materials. In this study, we successfully utilized pressure as an external stimulus to induce an amorphous state in layered crystal SiP. Comprehensive experimental and theoretical investigations revealed metallization in the high-pressure amorphous phase of SiP. The recovered samples were characterized using x-ray diffraction, Raman spectroscopy, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the metallic amorphous SiP obtained under extreme conditions can be stabilized at ambient conditions. These findings provide a viable pathway for inducing metastable phases in 2D materials and offer new insights into the design and development of advanced electronic devices.

关键词: crystal-to-amorphous transition, metallization, layered semiconductors, high pressure

Abstract: Amorphous states of two-dimensional (2D) materials frequently exhibit remarkable physical properties that differ significantly from their crystalline counterparts. Typically, metastable amorphous states can be achieved through rapid quenching from high temperatures. However, the heating process is detrimental to the structural integrity of 2D materials. In this study, we successfully utilized pressure as an external stimulus to induce an amorphous state in layered crystal SiP. Comprehensive experimental and theoretical investigations revealed metallization in the high-pressure amorphous phase of SiP. The recovered samples were characterized using x-ray diffraction, Raman spectroscopy, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the metallic amorphous SiP obtained under extreme conditions can be stabilized at ambient conditions. These findings provide a viable pathway for inducing metastable phases in 2D materials and offer new insights into the design and development of advanced electronic devices.

Key words: crystal-to-amorphous transition, metallization, layered semiconductors, high pressure

中图分类号:  (Amorphous semiconductors, metals, and alloys)

  • 61.43.Dq
85.40.Ls (Metallization, contacts, interconnects; device isolation) 72.20.-i (Conductivity phenomena in semiconductors and insulators) 91.60.Hg (Phase changes)