Stokes/anti-Stokes Raman spectroscopy of Al0.86Ga0.14N semiconductor alloy

doi:10.1088/1674-1056/adb67d

中国物理B ›› 2025, Vol. 34 ›› Issue (5): 57802-057802.doi: 10.1088/1674-1056/adb67d

Stokes/anti-Stokes Raman spectroscopy of Al_0.86Ga_0.14N semiconductor alloy

Yuru Lin(林玉茹)¹, Yu Li(李宇)¹, Binbin Wu(吴彬彬)¹, Jingyi Liu(刘静仪)¹, Ruiang Guo(郭睿昂)¹, Yangbin Wang(王扬斌)¹, Qiwei Hu(胡启威)^2,‡, and Li Lei(雷力)^1,†

1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
2 School of Physics and Electronic Engineering, Sichuan University of Science and Engineering, Zigong 643000, China

收稿日期:2024-11-27 修回日期:2025-02-08 接受日期:2025-02-15 发布日期:2025-04-18
通讯作者: Li Lei, Qiwei Hu E-mail:lei@scu.edu.cn;hqw920861@163.com
基金资助:
The authors thank Prof. Filippo S. Boi for the helpful discussion. Project supported by the National Natural Science Foundation of China (Grant No. 12374013) and the Fundamental Research Funds for the Central Universities (Grant No. 2020SCUNL107).

Stokes/anti-Stokes Raman spectroscopy of Al_0.86Ga_0.14N semiconductor alloy

Yuru Lin(林玉茹)¹, Yu Li(李宇)¹, Binbin Wu(吴彬彬)¹, Jingyi Liu(刘静仪)¹, Ruiang Guo(郭睿昂)¹, Yangbin Wang(王扬斌)¹, Qiwei Hu(胡启威)^2,‡, and Li Lei(雷力)^1,†

1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
2 School of Physics and Electronic Engineering, Sichuan University of Science and Engineering, Zigong 643000, China

Received:2024-11-27 Revised:2025-02-08 Accepted:2025-02-15 Published:2025-04-18
Contact: Li Lei, Qiwei Hu E-mail:lei@scu.edu.cn;hqw920861@163.com
Supported by:
The authors thank Prof. Filippo S. Boi for the helpful discussion. Project supported by the National Natural Science Foundation of China (Grant No. 12374013) and the Fundamental Research Funds for the Central Universities (Grant No. 2020SCUNL107).

摘要/Abstract

摘要： The lattice dynamics of a high Al composition semiconductor alloy, Al$_{0.86}$Ga$_{0.14}$N, in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85-823 K. The phonon anharmonic effect in Al$_{0.86}$Ga$_{0.14}$N is found to be stronger than that in GaN, revealing low thermal conductivity in the semiconductor alloy. Multi-phonon coupling behavior is analyzed by both Stokes Raman and anti-Stokes Raman spectroscopy. It is interesting to find that the anti-Stokes scattering exhibits stronger three-phonon coupling than the Stokes scattering, which may be due to the fact that the anti-stokes scattering process is generated from an excited state and the scattered photons have higher energies. The Stokes/anti-Stokes temperature correction factor $\beta $ for Raman modes in Al$_{0.86}$Ga$_{0.14}$N alloy are all smaller than those of the corresponding intrinsic modes in GaN and AlN. The reasons for the difference in $\beta $ can be attributed to three aspects, including the equipment setups, materials properties (the binding energy) and the coupling strength of Raman scattering and the sample.

关键词: Al$_{x}$Ga$_{1-x}$N, semiconductor alloy, Stokes/anti-Stokes Raman spectroscopy, two-mode behavior, multi-phonon coupling

Abstract: The lattice dynamics of a high Al composition semiconductor alloy, Al$_{0.86}$Ga$_{0.14}$N, in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85-823 K. The phonon anharmonic effect in Al$_{0.86}$Ga$_{0.14}$N is found to be stronger than that in GaN, revealing low thermal conductivity in the semiconductor alloy. Multi-phonon coupling behavior is analyzed by both Stokes Raman and anti-Stokes Raman spectroscopy. It is interesting to find that the anti-Stokes scattering exhibits stronger three-phonon coupling than the Stokes scattering, which may be due to the fact that the anti-stokes scattering process is generated from an excited state and the scattered photons have higher energies. The Stokes/anti-Stokes temperature correction factor $\beta $ for Raman modes in Al$_{0.86}$Ga$_{0.14}$N alloy are all smaller than those of the corresponding intrinsic modes in GaN and AlN. The reasons for the difference in $\beta $ can be attributed to three aspects, including the equipment setups, materials properties (the binding energy) and the coupling strength of Raman scattering and the sample.

Key words: Al$_{x}$Ga$_{1-x}$N, semiconductor alloy, Stokes/anti-Stokes Raman spectroscopy, two-mode behavior, multi-phonon coupling

中图分类号: (III-V and II-VI semiconductors)

78.30.Fs

74.25.nd (Raman and optical spectroscopy) 33.20.Fb (Raman and Rayleigh spectra (including optical scattering) ?) 63.20.kg (Phonon-phonon interactions)

Yuru Lin(林玉茹), Yu Li(李宇), Binbin Wu(吴彬彬), Jingyi Liu(刘静仪), Ruiang Guo(郭睿昂), Yangbin Wang(王扬斌), Qiwei Hu(胡启威), and Li Lei(雷力). Stokes/anti-Stokes Raman spectroscopy of Al_0.86Ga_0.14N semiconductor alloy[J]. 中国物理B, 2025, 34(5): 57802-057802.

参考文献

[1] Jain S C, Willander M, Narayan J and Overstraeten R V 2000 J. Appl. Phys. 87 965
[2] Figge S, Kröncke H, Hommel D and Epelbaum B M 2009 Appl. Phys. Lett. 94 101915
[3] Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 353
[4] Chang I F and Mitra S S 1971 Adv. Phys. 20 359
[5] Klochikhin A A, Davydov V Y, Goncharuk I N, Smirnov A N, Nikolaev A E, Baidakova M V, Aderhold J, Graul J, Stemmer J and Semchinova O 2000 Phys. Rev. B 62 2522
[6] Correia M R, Pereira S, Pereira E, Frandon J and Alves E 2003 Appl. Phys. Lett. 83 4761
[7] GebickiW, Strzeszewski J, Kamler G, Szyszko T and Podsiadło S 2000 Appl. Phys. Lett. 76 3870
[8] Schubert M, Kasic A, Tiwald T E, Off J, Kuhn B and Scholz F 1999 MRS Internet J. Nitride Semicond. Res. 4 e11
[9] Pomeroy J W, Kuball M, Uren M J and Martin T 2008 Phys. Status Solidi B 245 910
[10] Link A, Bitzer K, LimmerW, Sauer R, Kirchner C, Schwegler V, Kamp M, Ebling D G and Benz K W 1999 J. Appl. Phys. 86 6256
[11] Pu X D, Chen J, ShenWZ, Ogawa H and Guo Q X 2005 J. Appl. Phys. 98 033527
[12] Guo L L, Zhang Y H and Shen W Z 2006 Appl. Phys. Lett. 89 161920
[13] Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S and Aulombard R L 1998 Appl. Phys. Lett. 72 2674
[14] Wieser N, Ambacher O, Angerer H, Dimitrov R, Stutzmann M, Stritzker B and Lindner J K N 1999 Phys. Status Solidi B 216 807
[15] Yu S, Kim K W, Bergman L, Dutta M, Stroscio M A and Zavada J M 1998 Phys. Rev. B 58 15283
[16] Davydov V Yu, Goncharuk I N, Smirnov A N, Nikolaev A E, Lundin W V, Usikov A S, Klochikhin A A, Aderhold J, Graul J, Semchinova O and Harima H 2002 Phys. Rev. B 65 125203
[17] Kosemura D, Sodan V and De Wolf I 2017 J. Appl. Phys. 121 035702
[18] Liu Y, Yang X, Chen D, Lu H, Zhang R and Zheng Y 2015 Adv. Condens. Matter Phys. 2015 1
[19] Chen D J, Shen B, Wu X L, Shen J C, Xu F J, Zhang K X, Zhang R, Jiang R L, Shi Y and Zheng Y D 2005 Appl. Phys. A 80 1729
[20] Tao Y, Zhang L and Lei L 2022 Phys. Rev. B 105 174102
[21] Liu J, Tao Y, Fan C, Wu B, Tang Q and Lei L 2022 Chin. Phys. B 31 037801
[22] Zhao M, Wu B, Liu J and Lei L 2023 Chin. Phys. B 32 090704
[23] Gorczyca I, Christensen N E, Peltzer Y Blancá E L and Rodriguez C O 1995 Phys. Rev. B 51 11936
[24] Davydov V Yu, Kitaev Yu E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P and Evarestov R A 1998 Phys. Rev. B 58 12899
[25] Cantarero A, Cros A, Garro N, Gómez-GómezMI, García A, De Lima M M, Daudin B, Rizzi A, Denker C and Malindretos J 2011 Ann. Phys. (Berlin) 523 51
[26] Menéndez J and Cardona M 1984 Phys. Rev. B 29 2051
[27] LiWS, Shen Z X, Feng Z C and Chua S J 2000 J. Appl. Phys. 87 3332
[28] Wang D H, Xu T H and Song H Y Acta Phys. Sin. 65 130702 (in Chinese)
[29] Cuscó R, Gil B, Cassabois G and Artús L 2016 Phys. Rev. B 94 155435
[30] Peña-Alvarez M, Dalladay-Simpson P, Liu X D, Afonina V, Zhang H C, Howie R T and Gregoryanz E 2019 J. Appl. Phys. 125 025901
[31] Goncharov A F, Crowhurst J C, Struzhkin V V and Hemley R J 2008 Phys. Rev. Lett. 101 095502
[32] Santoro M, Lin J, Mao H and Hemley R J 2004 J. Chem. Phys. 121 2780
[33] Kip B J and Meier R J 1990 Appl. Spectro. 44 707
[34] Lin J F, Santoro M, Struzhkin V V, Mao H and Hemley R J 2004 Rev. Sci. Instrum. 75 3302

Metrics

Viewed

Full text

HTML			PDF

最新录用	在线预览	正式出版	最新录用	在线预览	正式出版
0	0	0	0	0	26

来源	本网站	其他网站

次数	25	1
比例	96%	4%

Abstract

最新录用	在线预览	正式出版

0	0	41

	来源	本网站

	次数	41
	比例	100%

Cited

Web of Science	Crossref	ScienceDirect	Search for Citations in Google Scholar >>


This page requires you have already subscribed to WoS.

Shared

Stokes/anti-Stokes Raman spectroscopy of Al_0.86Ga_0.14N semiconductor alloy

Stokes/anti-Stokes Raman spectroscopy of Al_0.86Ga_0.14N semiconductor alloy

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 2

Metrics

本文评价

推荐阅读 0

[1]	Minmin Zhao(赵旻旻), Binbin Wu(吴彬彬), Jingyi Liu(刘静仪), and Li Lei(雷力). Anti-Stokes/Stokes temperature calibration and its application in laser-heating diamond anvil cells[J]. 中国物理B, 2023, 32(9): 90704-090704.
[2]	张丽平, 郑震, 梁家昌, 乐小云, 邹超, 刘焕礼, 刘冶. Relations between compositional modulation and atomic ordering degree in thin films of ternary III—V semiconductor alloys[J]. 中国物理B, 2008, 17(12): 4619-4621.