中国物理B ›› 2023, Vol. 32 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/aca9c6
Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor
Dao Wang(王岛)1,3, Yan Zhang(张岩)2,3,†, Yongbin Guo(郭永斌)4, Zhenzhen Shang(尚真真)1, Fangjian Fu(符方健)1, and Xubing Lu(陆旭兵)3,‡
- 1 College of Science, Qiongtai Normal University, Key Laboratory of Child Cognition and Behavior Development of Hainan Province, Haikou 571127, China;
2 College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China;
3 Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China;
4 Key Laboratory of UWB and THz of Shandong Academy of Sciences, Institute of Automation, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor
Dao Wang(王岛)1,3, Yan Zhang(张岩)2,3,†, Yongbin Guo(郭永斌)4, Zhenzhen Shang(尚真真)1, Fangjian Fu(符方健)1, and Xubing Lu(陆旭兵)3,‡
- 1 College of Science, Qiongtai Normal University, Key Laboratory of Child Cognition and Behavior Development of Hainan Province, Haikou 571127, China;
2 College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China;
3 Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China;
4 Key Laboratory of UWB and THz of Shandong Academy of Sciences, Institute of Automation, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
摘要： Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO2-based ferroelectric thin films. Here, we systematically investigate the impact of the annealing process, with temperature varied from 350 ℃ to 550 ℃, on the electricity, ferroelectricity and reliability of a Hf0.5Zr0.5O2 (HZO; 7.5 nm) film capacitor. It was found that HZO film annealed at a low temperature of 400 ℃ can effectively suppress the formation of the monoclinic phase and reduce the leakage current. HZO film annealed at 400 ℃ also exhibits better ferroelectric properties than those annealed at 350 ℃ and 550 ℃. Specifically, the 400 ℃-annealed HZO film shows an outstanding 2Pr value of 54.6 upmu C·cm-2 at ±3.0 MV·cm-1, which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature. When the applied electric field increases to ±5.0 MV·cm-1, the 2Pr value can reach a maximum of 69.6 upmu C·cm-2. In addition, the HZO films annealed at 400 ℃ and 550 ℃ can endure up to bout 2.3×108 cycles under a cycling field of 2.0 MV·cm-1 before the occurrence of breakdown. In the 400 ℃-annealed HZO film, 72.1% of the initial polarization is maintained while only 44.9% is maintained in the 550 ℃-annealed HZO film. Our work demonstrates that HZO film with a low crystallization temperature (400 ℃) has quite a high ferroelectric polarization, which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.
中图分类号: (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
- 77.84.-s