中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68103-068103.doi: 10.1088/1674-1056/ac4650

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Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Guang-Tong Zhou(周广通)1, Yu-Hu Mu(穆玉虎)1, Yuan-Wen Song(宋元文)1, Zhuang-Fei Zhang(张壮飞)1, Yue-Wen Zhang(张跃文)1, Wei-Xia Shen(沈维霞)1, Qian-Qian Wang(王倩倩)1, Biao Wan(万彪)1, Chao Fang(房超)1,†, Liang-Chao Chen(陈良超)1,‡, Ya-Dong Li(李亚东)2, and Xiao-Peng Jia(贾晓鹏)1   

  1. 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
    2 College of Electronical Information Engineering, Yangtze Normal University, Chongqing 408100, China
  • 收稿日期:2021-11-29 修回日期:2021-12-22 接受日期:2021-12-24 出版日期:2022-05-17 发布日期:2022-05-26
  • 通讯作者: Chao Fang, Liang-Chao Chen E-mail:fangchao1989@zzu.edu.cn;chenlc@zzu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11804305, 12004341, 11704340, and 12004342), the Key Research Project of Higher Education Institution of Henan Province, China (Grant No. 19A140006), the Scientific and Technological Project in Henan Province, China (Grant No. 202102210198), the Natural Science Foundation of Chongqing, China (Grant No. cstc2019jcyjmsxmX0391), and the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJQN201901405).

Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Guang-Tong Zhou(周广通)1, Yu-Hu Mu(穆玉虎)1, Yuan-Wen Song(宋元文)1, Zhuang-Fei Zhang(张壮飞)1, Yue-Wen Zhang(张跃文)1, Wei-Xia Shen(沈维霞)1, Qian-Qian Wang(王倩倩)1, Biao Wan(万彪)1, Chao Fang(房超)1,†, Liang-Chao Chen(陈良超)1,‡, Ya-Dong Li(李亚东)2, and Xiao-Peng Jia(贾晓鹏)1   

  1. 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
    2 College of Electronical Information Engineering, Yangtze Normal University, Chongqing 408100, China
  • Received:2021-11-29 Revised:2021-12-22 Accepted:2021-12-24 Online:2022-05-17 Published:2022-05-26
  • Contact: Chao Fang, Liang-Chao Chen E-mail:fangchao1989@zzu.edu.cn;chenlc@zzu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11804305, 12004341, 11704340, and 12004342), the Key Research Project of Higher Education Institution of Henan Province, China (Grant No. 19A140006), the Scientific and Technological Project in Henan Province, China (Grant No. 202102210198), the Natural Science Foundation of Chongqing, China (Grant No. cstc2019jcyjmsxmX0391), and the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJQN201901405).

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摘要： The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B2O3 in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B2O3 without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.

关键词: high pressure and high temperature (HPHT), diamond, B2O3, Ti

Abstract: The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B2O3 in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B2O3 without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.

Key words: high pressure and high temperature (HPHT), diamond, B2O3, Ti

中图分类号:  (Diamond)

  • 81.05.ug
61.50.Ah (Theory of crystal structure, crystal symmetry; calculations and modeling) 81.10.Fq (Growth from melts; zone melting and refining) 81.05.uf (Graphite)