中国物理B ›› 2022, Vol. 31 ›› Issue (5): 57702-057702.doi: 10.1088/1674-1056/ac272a
Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode
Qiliang Wang(王启亮)1,2,†, Tingting Wang(王婷婷)3,†, Taofei Pu(蒲涛飞)4, Shaoheng Cheng(成绍恒)1,2, Xiaobo Li(李小波)4,‡, Liuan Li(李柳暗)1,2,§, and Jinping Ao(敖金平)3,4
- 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
3 National Key Discipline Laboratory of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China;
4 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode
Qiliang Wang(王启亮)1,2,†, Tingting Wang(王婷婷)3,†, Taofei Pu(蒲涛飞)4, Shaoheng Cheng(成绍恒)1,2, Xiaobo Li(李小波)4,‡, Liuan Li(李柳暗)1,2,§, and Jinping Ao(敖金平)3,4
- 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
3 National Key Discipline Laboratory of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China;
4 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
摘要： A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.
中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
- 77.84.Bw