A 4H-SiC merged P-I-N Schottky with floating back-to-back diode
Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生)
A 4H-SiC merged P-I-N Schottky with floating back-to-back diode
Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生)
中国物理B
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2022, (2): 28503
-028503
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DOI: 10.1088/1674-1056/ac0e23