Epitaxial fabrication of monolayer copper arsenide on Cu(111)

doi:10.1088/1674-1056/ab8db3

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 77301-077301.doi: 10.1088/1674-1056/ab8db3

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Epitaxial fabrication of monolayer copper arsenide on Cu(111)

Shuai Zhang(张帅), Yang Song(宋洋), Jin Mei Li(李金梅), Zhenyu Wang(王振宇), Chen Liu(刘晨), Jia-Ou Wang(王嘉鸥), Lei Gao(高蕾), Jian-Chen Lu(卢建臣), Yu Yang Zhang(张余洋), Xiao Lin(林晓), Jinbo Pan(潘金波), Shi Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧)

1 Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Kunming University of Science and Technology, Kunming 650500, China;
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2020-04-17 修回日期:2020-04-24 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xiao Lin, Jinbo Pan, Hong-Jun Gao E-mail:xlin@ucas.ac.cn;jbpan@iphy.ac.cn;jbpan@iphy.ac.cn
基金资助:
Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the University of Chinese Academy of Sciences. A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.

Epitaxial fabrication of monolayer copper arsenide on Cu(111)

Shuai Zhang(张帅)¹, Yang Song(宋洋)¹, Jin Mei Li(李金梅)², Zhenyu Wang(王振宇)¹, Chen Liu(刘晨)², Jia-Ou Wang(王嘉鸥)², Lei Gao(高蕾)³, Jian-Chen Lu(卢建臣)³, Yu Yang Zhang(张余洋)^1,4, Xiao Lin(林晓)^1,4, Jinbo Pan(潘金波)¹, Shi Xuan Du(杜世萱)^1,4, Hong-Jun Gao(高鸿钧)^1,4

1 Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Kunming University of Science and Technology, Kunming 650500, China;
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2020-04-17 Revised:2020-04-24 Online:2020-07-05 Published:2020-07-05
Contact: Xiao Lin, Jinbo Pan, Hong-Jun Gao E-mail:xlin@ucas.ac.cn;jbpan@iphy.ac.cn;jbpan@iphy.ac.cn
Supported by:
Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the University of Chinese Academy of Sciences. A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.

摘要/Abstract

摘要： We report the epitaxial growth of monolayer copper arsenide (CuAs) with a honeycomb lattice on Cu(111) by molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) verify the √3×√3 superlattice of monolayer CuAs on Cu(111) substrate. Angle-resolved photoemission spectroscopy (ARPES) measurements together with DFT calculations demonstrate the electronic band structures of monolayer CuAs and reveal its metallic nature. Further calculations show that charge transfer from Cu(111) substrate to monolayer CuAs lifts the Fermi level and tunes the band structure of the monolayer CuAs. This high-quality epitaxial monolayer CuAs with potential tunable band gap holds promise on the applications in nano-electronic devices.

关键词: copper arsenide (CuAs), band structure, scanning tunneling microscopy (STM)

Abstract: We report the epitaxial growth of monolayer copper arsenide (CuAs) with a honeycomb lattice on Cu(111) by molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) verify the √3×√3 superlattice of monolayer CuAs on Cu(111) substrate. Angle-resolved photoemission spectroscopy (ARPES) measurements together with DFT calculations demonstrate the electronic band structures of monolayer CuAs and reveal its metallic nature. Further calculations show that charge transfer from Cu(111) substrate to monolayer CuAs lifts the Fermi level and tunes the band structure of the monolayer CuAs. This high-quality epitaxial monolayer CuAs with potential tunable band gap holds promise on the applications in nano-electronic devices.

Key words: copper arsenide (CuAs), band structure, scanning tunneling microscopy (STM)

中图分类号: (Surface states, band structure, electron density of states)

73.20.At

81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 82.20.Wt (Computational modeling; simulation)

张帅, 宋洋, 李金梅, 王振宇, 刘晨, 王嘉鸥, 高蕾, 卢建臣, 张余洋, 林晓, 潘金波, 杜世萱, 高鸿钧. Epitaxial fabrication of monolayer copper arsenide on Cu(111)[J]. 中国物理B, 2020, 29(7): 77301-077301.

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Epitaxial fabrication of monolayer copper arsenide on Cu(111)

Epitaxial fabrication of monolayer copper arsenide on Cu(111)

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