Epitaxial growth and air-stability of monolayer Cu2Te

doi:10.1088/1674-1056/ab5781

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 18104-018104.doi: 10.1088/1674-1056/ab5781

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Epitaxial growth and air-stability of monolayer Cu₂Te

K Qian(钱凯), L Gao(高蕾), H Li(李航), S Zhang(张帅), J H Yan(严佳浩), C Liu(刘晨), J O Wang(王嘉鸥), T Qian(钱天), H Ding(丁洪), Y Y Zhang(张余洋), X Lin(林晓), S X Du(杜世萱), H-J Gao(高鸿钧)

1 Institute of Physics&University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2019-11-01 修回日期:2019-11-08 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: X Lin, S X Du E-mail:sxdu@iphy.ac.cn;xlin@ucas.ac.cn

Epitaxial growth and air-stability of monolayer Cu₂Te

K Qian(钱凯)¹, L Gao(高蕾)¹, H Li(李航)¹, S Zhang(张帅)¹, J H Yan(严佳浩)¹, C Liu(刘晨)², J O Wang(王嘉鸥)², T Qian(钱天)^1,3, H Ding(丁洪)^1,3, Y Y Zhang(张余洋)^1,3, X Lin(林晓)^1,3, S X Du(杜世萱)^1,3, H-J Gao(高鸿钧)^1,3

1 Institute of Physics&University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2019-11-01 Revised:2019-11-08 Online:2020-01-05 Published:2020-01-05
Contact: X Lin, S X Du E-mail:sxdu@iphy.ac.cn;xlin@ucas.ac.cn

摘要/Abstract

摘要： A new two-dimensional atomic crystal, monolayer cuprous telluride (Cu₂Te) has been fabricated on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE). The low-energy electron diffraction (LEED) characterization shows that the monolayer Cu₂Te forms a √3×√3 superstructure with respect to the graphene substrate. The atomic structure of the monolayer Cu₂Te is investigated through a combination of scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations. The stoichiometry of the Cu₂Te sample is verified by x-ray photoelectron spectroscopy (XPS) measurement. The angle-resolved photoemission spectroscopy (ARPES) data present the electronic band structure of the sample, which is in good agreement with the calculated results. Furthermore, air-exposure experiments reveal the chemical stability of the monolayer Cu₂Te. The fabrication of this new 2D material with a particular structure may bring new physical properties for future applications.

关键词: cuprous telluride (Cu₂Te), scanning tunneling microscopy (STM), density functional theory (DFT), chemical stability

Abstract: A new two-dimensional atomic crystal, monolayer cuprous telluride (Cu₂Te) has been fabricated on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE). The low-energy electron diffraction (LEED) characterization shows that the monolayer Cu₂Te forms a √3×√3 superstructure with respect to the graphene substrate. The atomic structure of the monolayer Cu₂Te is investigated through a combination of scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations. The stoichiometry of the Cu₂Te sample is verified by x-ray photoelectron spectroscopy (XPS) measurement. The angle-resolved photoemission spectroscopy (ARPES) data present the electronic band structure of the sample, which is in good agreement with the calculated results. Furthermore, air-exposure experiments reveal the chemical stability of the monolayer Cu₂Te. The fabrication of this new 2D material with a particular structure may bring new physical properties for future applications.

Key words: cuprous telluride (Cu₂Te), scanning tunneling microscopy (STM), density functional theory (DFT), chemical stability

中图分类号: (Methods of deposition of films and coatings; film growth and epitaxy)

81.15.-z

81.05.Zx (New materials: theory, design, and fabrication) 81.07.Bc (Nanocrystalline materials)

钱凯, 高蕾, 李航, 张帅, 严佳浩, 刘晨, 王嘉鸥, 钱天, 丁洪, 张余洋, 林晓, 杜世萱, 高鸿钧. Epitaxial growth and air-stability of monolayer Cu₂Te[J]. 中国物理B, 2020, 29(1): 18104-018104.

K Qian(钱凯), L Gao(高蕾), H Li(李航), S Zhang(张帅), J H Yan(严佳浩), C Liu(刘晨), J O Wang(王嘉鸥), T Qian(钱天), H Ding(丁洪), Y Y Zhang(张余洋), X Lin(林晓), S X Du(杜世萱), H-J Gao(高鸿钧). Epitaxial growth and air-stability of monolayer Cu₂Te[J]. Chin. Phys. B, 2020, 29(1): 18104-018104.

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Epitaxial growth and air-stability of monolayer Cu₂Te

Epitaxial growth and air-stability of monolayer Cu₂Te

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