Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4

doi:10.1088/1674-1056/ac2b92

中国物理B ›› 2021, Vol. 30 ›› Issue (12): 127901-127901.doi: 10.1088/1674-1056/ac2b92

Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄

Yunlong Li(李云龙)¹, Chaozhi Huang(黄超之)¹, Guohua Wang(王国华)¹, Jiayuan Hu(胡佳元)¹, Shaofeng Duan(段绍峰)¹, Chenhang Xu(徐晨航)¹, Qi Lu(卢琦)¹, Qiang Jing(景强)¹, Wentao Zhang(张文涛)^1,†, and Dong Qian(钱冬)^1,2,‡

1 Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
2 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China

收稿日期:2021-07-04 修回日期:2021-09-04 接受日期:2021-09-30 出版日期:2021-11-15 发布日期:2021-11-20
通讯作者: Wentao Zhang, Dong Qian E-mail:wentaozhang@sjtu.edu.cn;dqian@sjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11521404, 12074248, 11974243, and 11804194). D. Q. and W. T. Z. acknowledge additional support from a Shanghai talent program.

Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄

1 Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
2 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China

Received:2021-07-04 Revised:2021-09-04 Accepted:2021-09-30 Online:2021-11-15 Published:2021-11-20
Contact: Wentao Zhang, Dong Qian E-mail:wentaozhang@sjtu.edu.cn;dqian@sjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11521404, 12074248, 11974243, and 11804194). D. Q. and W. T. Z. acknowledge additional support from a Shanghai talent program.

摘要/Abstract

摘要： Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.

关键词: angle-resolved photoemission spectroscopy, band structure, topological insulator, ternary compounds

Abstract: Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.

Key words: angle-resolved photoemission spectroscopy, band structure, topological insulator, ternary compounds

中图分类号: (Photoemission and photoelectron spectra)

79.60.-i

71.20.-b (Electron density of states and band structure of crystalline solids) 73.20.At (Surface states, band structure, electron density of states) 74.70.Dd (Ternary, quaternary, and multinary compounds)

Yunlong Li(李云龙), Chaozhi Huang(黄超之), Guohua Wang(王国华), Jiayuan Hu(胡佳元), Shaofeng Duan(段绍峰), Chenhang Xu(徐晨航), Qi Lu(卢琦), Qiang Jing(景强), Wentao Zhang(张文涛), and Dong Qian(钱冬). Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄[J]. 中国物理B, 2021, 30(12): 127901-127901.

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Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄

Topological Dirac surface states in ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄

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