Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

doi:10.1088/1674-1056/ab7e93

中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58103-058103.doi: 10.1088/1674-1056/ab7e93

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China

收稿日期:2019-10-15 修回日期:2020-01-25 出版日期:2020-05-05 发布日期:2020-05-05
通讯作者: Bin Liu, Zi-Li Xie E-mail:bliu@nju.edu.cn;xzl@nju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61704149, 61674076, and 61605071), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BY2013077, BK20141320, and BE2015111), the Project of Science and Technology Development Program in Shandong Province, China (Grant Nos. 2013YD02054 and 2013YD02008), the Project of Shandong Provincial Higher Educational Science and Technology Program, China (Grant No. J13LN08), the Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics, Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XYDXX-081), the Open Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2017KF03), the Project of Autonomous Innovation and Achievement Transformation Program in Zaozhuang City, China (Grant No. 2017GH3), the Overseas Study Program Funded by Shandong Provincial Government, China, the Laboratory Open Fund from Jiangsu Key Laboratory of Photoelectric Information Functional Materials, China, and the Doctoral Foundation Project of Zaozhuang University, China.

Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Qing-Jun Xu(徐庆君)^1,2, Shi-Ying Zhang(张士英)^1,2, Bin Liu(刘斌)¹, Zhen-Hua Li(李振华)^1,2, Tao Tao(陶涛)¹, Zi-Li Xie(谢自力)¹, Xiang-Qian Xiu(修向前)¹, Dun-Jun Chen(陈敦军)¹, Peng Chen(陈鹏)¹, Ping Han(韩平)¹, Ke Wang(王科)¹, Rong Zhang(张荣)¹, You-Liao Zheng(郑有炓)¹

1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China

Received:2019-10-15 Revised:2020-01-25 Online:2020-05-05 Published:2020-05-05
Contact: Bin Liu, Zi-Li Xie E-mail:bliu@nju.edu.cn;xzl@nju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61704149, 61674076, and 61605071), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BY2013077, BK20141320, and BE2015111), the Project of Science and Technology Development Program in Shandong Province, China (Grant Nos. 2013YD02054 and 2013YD02008), the Project of Shandong Provincial Higher Educational Science and Technology Program, China (Grant No. J13LN08), the Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics, Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XYDXX-081), the Open Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2017KF03), the Project of Autonomous Innovation and Achievement Transformation Program in Zaozhuang City, China (Grant No. 2017GH3), the Overseas Study Program Funded by Shandong Provincial Government, China, the Laboratory Open Fund from Jiangsu Key Laboratory of Photoelectric Information Functional Materials, China, and the Doctoral Foundation Project of Zaozhuang University, China.

摘要/Abstract

摘要： The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (～ 10²⁰ cm^-3) grown by metal-organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (V_III complex)^1- as well as V_N³⁺ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al_xGa_1-xN (x=0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×10¹⁸ cm^-3 and 3.3×10¹⁷ cm^-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors' concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

关键词: AlGaN, Mg doping, MOCVD, cathodo-luminescence, Hall measurement

Abstract: The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (～ 10²⁰ cm^-3) grown by metal-organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (V_III complex)^1- as well as V_N³⁺ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al_xGa_1-xN (x=0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×10¹⁸ cm^-3 and 3.3×10¹⁷ cm^-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors' concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

Key words: AlGaN, Mg doping, MOCVD, cathodo-luminescence, Hall measurement

中图分类号: (III-V semiconductors)

81.05.Ea

82.33.Ya (Chemistry of MOCVD and other vapor deposition methods) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.60.Hk (Cathodoluminescence, ionoluminescence)

徐庆君, 张士英, 刘斌, 李振华, 陶涛, 谢自力, 修向前, 陈敦军, 陈鹏, 韩平, 王科, 张荣, 郑有炓. Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys[J]. 中国物理B, 2020, 29(5): 58103-058103.

Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓). Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys[J]. Chin. Phys. B, 2020, 29(5): 58103-058103.

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Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

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