Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

doi:10.1088/1674-1056/28/5/058501

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/28/5/058501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

1 Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 200000, China;
3 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200000, China;
4 Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China;
5 University of Chinese Academy of Sciences, Beijing 100049, China;
6 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
7 Beijing Huahang Radio Measurement & Research Institute, Beijing 100013, China;
8 College of Electronic and Information Engineering, Suzhou University of Sciences and Technology, Suzhou 215009, China

收稿日期:2019-01-17 修回日期:2019-02-27 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Jian-Dong Sun, Hua Qin E-mail:jdsun2008@sinano.ac.cn;hqin2007@sinano.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFF0100501), the National Natural Science Foundation of China (Grant Nos. 61771466, 61775231, and 61611530708), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372).

Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

Zhi-Feng Tian(田志锋)^1,2,3,5, Peng Xu(徐鹏)^1,4, Yao Yu(余耀)^1,5, Jian-Dong Sun(孙建东)¹, Wei Feng(冯伟)^1,6, Qing-Feng Ding(丁青峰)^1,2, Zhan-Wei Meng(孟占伟)^1,4, Xiang Li(李想)^1,6, Jin-Hua Cai(蔡金华)¹, Zhong-Xin Zheng(郑中信)⁷, Xin-Xing Li(李欣幸)¹, Lin Jin(靳琳)¹, Hua Qin(秦华)^1,2,5, Yun-Fei Sun(孙云飞)⁸

1 Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 200000, China;
3 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200000, China;
4 Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China;
5 University of Chinese Academy of Sciences, Beijing 100049, China;
6 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
7 Beijing Huahang Radio Measurement & Research Institute, Beijing 100013, China;
8 College of Electronic and Information Engineering, Suzhou University of Sciences and Technology, Suzhou 215009, China

Received:2019-01-17 Revised:2019-02-27 Online:2019-05-05 Published:2019-05-05
Contact: Jian-Dong Sun, Hua Qin E-mail:jdsun2008@sinano.ac.cn;hqin2007@sinano.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFF0100501), the National Natural Science Foundation of China (Grant Nos. 61771466, 61775231, and 61611530708), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372).

摘要/Abstract

摘要：

The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled AlGaN/GaN high-electron-mobility-transistor (HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source-drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However, the noise spectral density maintains rather constantly around 1-2 pA/Hz^1/2 at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power (NEP) is increased from 22 pW/Hz^1/2 at 300 K to 60 pW/Hz^1/2 at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz^1/2 due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.

关键词: terahertz detection, gallium nitride, noise spectrum, responsivity

Abstract:

Key words: terahertz detection, gallium nitride, noise spectrum, responsivity

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

72.80.Ey (III-V and II-VI semiconductors) 81.40.Gh (Other heat and thermomechanical treatments)

田志锋, 徐鹏, 余耀, 孙建东, 冯伟, 丁青峰, 孟占伟, 李想, 蔡金华, 郑中信, 李欣幸, 靳琳, 秦华, 孙云飞. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. 中国物理B, 2019, 28(5): 58501-058501.

Zhi-Feng Tian(田志锋), Peng Xu(徐鹏), Yao Yu(余耀), Jian-Dong Sun(孙建东), Wei Feng(冯伟), Qing-Feng Ding(丁青峰), Zhan-Wei Meng(孟占伟), Xiang Li(李想), Jin-Hua Cai(蔡金华), Zhong-Xin Zheng(郑中信), Xin-Xing Li(李欣幸), Lin Jin(靳琳), Hua Qin(秦华), Yun-Fei Sun(孙云飞). Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. Chin. Phys. B, 2019, 28(5): 58501-058501.

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Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures

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