中国物理B ›› 2019, Vol. 28 ›› Issue (4): 46802-046802.doi: 10.1088/1674-1056/28/4/046802

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Tunable 2H-TaSe2 room-temperature terahertz photodetector

Jin Wang(王瑾), Cheng Guo(郭程), Wanlong Guo(郭万龙), Lin Wang(王林), Wangzhou Shi(石旺舟), Xiaoshuang Chen(陈效双)   

  1. 1 Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234, China;
    2 State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-12-12 修回日期:2019-02-01 出版日期:2019-04-05 发布日期:2019-04-05
  • 通讯作者: Lin Wang, Wangzhou Shi, Xiaoshuang Chen E-mail:wanglin@mail.sitp.ac.cn;wzshi@shnu.edu.cn;xschen@mail.sitp.ac.cn
  • 基金资助:

    Project supported by the State Key Basic Research Program of China (Grant Nos. 2017YFA0205801, 2017YFA0305500, and 2013CB632705), the National Natural Science Foundation of China (Grant Nos. 11334008, 61290301, 61521005, 61405230, and 61675222), the Youth Innovation Promotion Association (CAS), and the Aviation Science Fund (Grant No. 20162490001).

Tunable 2H-TaSe2 room-temperature terahertz photodetector

Jin Wang(王瑾)1,2, Cheng Guo(郭程)2,3, Wanlong Guo(郭万龙)2,3, Lin Wang(王林)2,3, Wangzhou Shi(石旺舟)1, Xiaoshuang Chen(陈效双)2,3   

  1. 1 Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234, China;
    2 State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-12-12 Revised:2019-02-01 Online:2019-04-05 Published:2019-04-05
  • Contact: Lin Wang, Wangzhou Shi, Xiaoshuang Chen E-mail:wanglin@mail.sitp.ac.cn;wzshi@shnu.edu.cn;xschen@mail.sitp.ac.cn
  • Supported by:

    Project supported by the State Key Basic Research Program of China (Grant Nos. 2017YFA0205801, 2017YFA0305500, and 2013CB632705), the National Natural Science Foundation of China (Grant Nos. 11334008, 61290301, 61521005, 61405230, and 61675222), the Youth Innovation Promotion Association (CAS), and the Aviation Science Fund (Grant No. 20162490001).

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摘要：

Two-dimensional transition metal dichalcogenides (TMDs) provide fertile ground to study the interplay between dimensionality and electronic properties because they exhibit a variety of electronic phases, such as semiconducting, superconducting, charge density waves (CDW) states, and other unconventional physical properties. Compared with other classical TMDs, such as Mott insulator 1T-TaS2 or superconducting 2H-NbSe2, bulk 2H-TaSe2 has been a canonical system and a touchstone for modeling the CDW measurement with a less complex phase diagram. In contrast to ordinary semiconductors that have only single-particle excitations, CDW can have collective excitation and carry current in a collective fashion. However, manipulating this collective condensation of these intriguing systems for device applications has not been explored. Here, the CDW-induced collective driven of non-equilibrium carriers in a field-effect transistor has been demonstrated for the sensitive photodetection at the highly-pursuit terahertz band. We show that the 2H-TaSe2-based photodetector exhibits a fast photoresponse, as short as 14 μs, and a responsivity of over 27 V/W at room temperature. The fast response time, relative high responsivity and ease of fabrication of these devices yields a new prospect of exploring CDW condensate in TMDs with the aim of overcoming the existing limitations for a variety of practical applications at THz spectral range.

关键词: terahertz detection, transition metal dichalcogenides, photoconductive

Abstract:

Two-dimensional transition metal dichalcogenides (TMDs) provide fertile ground to study the interplay between dimensionality and electronic properties because they exhibit a variety of electronic phases, such as semiconducting, superconducting, charge density waves (CDW) states, and other unconventional physical properties. Compared with other classical TMDs, such as Mott insulator 1T-TaS2 or superconducting 2H-NbSe2, bulk 2H-TaSe2 has been a canonical system and a touchstone for modeling the CDW measurement with a less complex phase diagram. In contrast to ordinary semiconductors that have only single-particle excitations, CDW can have collective excitation and carry current in a collective fashion. However, manipulating this collective condensation of these intriguing systems for device applications has not been explored. Here, the CDW-induced collective driven of non-equilibrium carriers in a field-effect transistor has been demonstrated for the sensitive photodetection at the highly-pursuit terahertz band. We show that the 2H-TaSe2-based photodetector exhibits a fast photoresponse, as short as 14 μs, and a responsivity of over 27 V/W at room temperature. The fast response time, relative high responsivity and ease of fabrication of these devices yields a new prospect of exploring CDW condensate in TMDs with the aim of overcoming the existing limitations for a variety of practical applications at THz spectral range.

Key words: terahertz detection, transition metal dichalcogenides, photoconductive

中图分类号:  (Metallic surfaces)

  • 68.47.De
71.35.Lk (Collective effects (Bose effects, phase space filling, and excitonic phase transitions)) 72.20.-i (Conductivity phenomena in semiconductors and insulators) 73.20.At (Surface states, band structure, electron density of states)