Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/27/7/078503

中国物理B ›› 2018, Vol. 27 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/27/7/078503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平)

1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
3 School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2018-01-25 修回日期:2018-05-08 出版日期:2018-07-05 发布日期:2018-07-05
通讯作者: Liuan Li, Jin-Ping Ao E-mail:liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang(张彤)¹, Taofei Pu(蒲涛飞)¹, Tian Xie(谢天)¹, Liuan Li(李柳暗)², Yuyu Bu(补钰煜)³, Xiao Wang(王霄)³, Jin-Ping Ao(敖金平)^1,3

1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
3 School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2018-01-25 Revised:2018-05-08 Online:2018-07-05 Published:2018-07-05
Contact: Liuan Li, Jin-Ping Ao E-mail:liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

摘要/Abstract

摘要：

In this paper, we adopted thermally stable HfO_xN_y as gate dielectric for TiN/HfO_xN_y/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfO_xN_y films were dependent on oxygen flow rate in the O₂/N₂/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO₂ and HfO_xN_y dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfO_xN_y dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO₂ gated one at 600 ℃. This result shows that the HfO_xN_y dielectric is a promising candidate for the self-aligned gate process.

关键词: AlGaN/GaN HFET, gate dielectric, HfO_xN_y, thermal stability

Abstract:

Key words: AlGaN/GaN HFET, gate dielectric, HfO_xN_y, thermal stability

中图分类号: (Semiconductor devices)

85.30.-z

61.82.Ms (Insulators) 68.60.Dv (Thermal stability; thermal effects)

张彤, 蒲涛飞, 谢天, 李柳暗, 补钰煜, 王霄, 敖金平. Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2018, 27(7): 78503-078503.

Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平). Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors[J]. Chin. Phys. B, 2018, 27(7): 78503-078503.

参考文献 23

[1]	Iwakami S, Yanagihara M, Machida O, Chino E, Kaneko N, Goto H and Ohtsuka K 2004 Jpn. J. Appl. Phys. 43 L831
[2]	Sang D, Li H and Wang Q 2016 Nanotechnology 27 072501
[3]	Zhang J, Wang L, Li L, Wang Q, Jiang Y, Zhu H and Ao J P 2016 Chin. Phys. B 25 087308
[4]	Li L, Zhang J, Liu Y and Ao J P 2016 Chin. Phys. B 25 038503
[5]	Zhang J, Wang L, Wang Q, Jiang Y, Li L, Zhu H and Ao J P 2016 Semicond. Sci. Tech. 31 035015
[6]	Wang L, Zhang J, Li L, Maeda Y and Ao J P 2017 Chin. Phys. B 26 037201
[7]	Zhang H and Solanki R 2001 J. Electrochem. Soc. 148 F63
[8]	Houssa M, Pantisano L, Ragnarsson L A, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G and Heyns M M 2006 Mater. Sci. Eng. R-Rep. 51 37
[9]	Wang G M, Moses D, Heeger A J, Zhang H M, Narasimhan M and Demaray R E 2004 J. Appl. Phys. 95 316
[10]	Neumayer D A and Cartier E 2001 J. Appl. Phys. 90 1801
[11]	He G, Gao J, Chen H, Cui J, Sun Z and Chen X 2014 ACS Appl. Mater. Inter 6 22013
[12]	Zhang J W, He G, Zhou L, Chen H S, Chen X S, Chen X F, Deng B, Lv J G and Sun Z Q 2014 J. Alloy. Compd. 611 253
[13]	Kim H, McIntyre P C and Saraswat K C 2003 Appl. Phys. Lett. 82 106
[14]	Willk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[15]	Cheng C L, Liao K S C and Wang T K 2006 Solid-State Electron. 50 103
[16]	He G, Fang Q and Zhang L D 2006 Mater. Sci. Semicon. Proc. 9 870
[17]	Choi C H, Jeon T S, Clark R and Kwong D L 2003 IEEE Electr. Device Lett. 24 215
[18]	Park J H, Hyun J S, Kang B C and Boo J H 2007 Surf. Coat. Technol. 201 5336
[19]	Kang C S, Cho H J, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
[20]	Wang W, Nabatame T and Shimogaki Y 2005 Surf. Sci. 588 108
[21]	Feng L P, Li N, Tian H and Liu Z T 2014 J. Mater. Sci. 49 1875
[22]	Tan S T, Chen B J, Sun X W, Fan W J, Kwok H S, Zhang X H and Chua S J 2005 J. Appl. Phys. 98 013505
[23]	He G, Chen X S and Sun Z Q 2013 Surf. Sci. Rep. 68 68

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 23

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Lizhi Fang(方立志), Xiong Zhou(周雄), Zhiwei Zhao(赵志伟), Biao Zheng(郑标), Haiping Xia(夏海平), Jun Wang(王军), Hongwei Song(宋宏伟), and Baojiu Chen(陈宝玖). Luminescent characteristics of Tm³⁺/Tb³⁺/Eu³⁺ tri-doped Na₅Y₉F₃₂ single crystals for white emission with high thermal stability[J]. 中国物理B, 2022, 31(12): 127802-127802.
[2]	Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701.
[3]	Ines Ben Amor, Lotfi Saadaoui, Abdulaziz N. Alharbi, Talal M. Althagafi, and Taoufik Soltani. Influences of nanoparticles and chain length on thermodynamic and electrical behavior of fluorine liquid crystals[J]. 中国物理B, 2022, 31(10): 104202-104202.
[4]	牛磊, 陈益敏, 沈祥, 徐铁峰. Thermal stability of magnetron sputtering Ge-Ga-S films[J]. 中国物理B, 2020, 29(8): 87803-087803.
[5]	赵亚文, 李柳暗, 阙陶陶, 丘秋凌, 何亮, 刘振兴, 张津玮, 吴千树, 陈佳, 吴志盛, 刘扬. Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric[J]. 中国物理B, 2020, 29(6): 67203-067203.
[6]	徐梦姣, 李素霞, 季辰辰, 雒晚霞, 王鲁香. Energy transfer, luminescence properties, and thermal stability of color tunable barium pyrophosphate phosphors[J]. 中国物理B, 2020, 29(6): 63301-063301.
[7]	贾海洪, 包德亮, 张余洋, 杜世萱. Structural and thermal stabilities of Au@Ag core-shell nanoparticles and their arrays: A molecular dynamics simulation[J]. 中国物理B, 2020, 29(4): 48701-048701.
[8]	房帅, 马红安, 郭龙锁, 陈良超, 王遥, 丁路遥, 蔡正浩, 王健, 贾晓鹏. Characteristics of urea under high pressure and high temperature[J]. 中国物理B, 2019, 28(9): 98101-098101.
[9]	杨凤, 王聪, 潘宇浩, 周谐宇, 孔祥华, 季威. Surface stabilized cubic phase of CsPbI₃ and CsPbBr₃ at room temperature[J]. 中国物理B, 2019, 28(5): 56402-056402.
[10]	韩茹, 张海潮, 王党辉, 李翠. Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer[J]. 中国物理B, 2019, 28(1): 18505-018505.
[11]	叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304.
[12]	唐语, 李德聪, 陈钟, 邓书平, 孙璐琪, 刘文婷, 申兰先, 邓书康. Excellent thermal stability and thermoelectric properties of Pnma-phase SnSe in middle temperature aerobic environment[J]. 中国物理B, 2018, 27(11): 118105-118105.
[13]	赖云锋, 陈凡, 曾泽村, 林培杰, 程树英, 俞金玲. Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers[J]. 中国物理B, 2017, 26(8): 87305-087305.
[14]	钟础宇, 张星, 刘迪, 宁永强, 王立军. Enhanced thermal stability of VCSEL array by thermoelectric analysis-based optimization of mesas distribution[J]. 中国物理B, 2017, 26(6): 64204-064204.
[15]	王磊, 张家琦, 李柳暗, 前田裕太郎, 敖金平. Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(3): 37201-037201.