Synthesis of thermally stable HfO
xN
y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors
张彤, 蒲涛飞, 谢天, 李柳暗, 补钰煜, 王霄, 敖金平
Synthesis of thermally stable HfO
xN
y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平)
中国物理B
.
2018, (7): 78503
-078503
.
DOI: 10.1088/1674-1056/27/7/078503