中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87701-087701.doi: 10.1088/1674-1056/26/8/087701
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy
Ji-Bin Fan(樊继斌), Xiao-Jiao Cheng(程晓姣), Hong-Xia Liu(刘红侠), Shu-Long Wang(王树龙), Li Duan(段理)
- 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy
Ji-Bin Fan(樊继斌)1, Xiao-Jiao Cheng(程晓姣)1, Hong-Xia Liu(刘红侠)2, Shu-Long Wang(王树龙)2, Li Duan(段理)1
- 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
摘要：
In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO2/Al2O3 gate stack on germanium (Ge) substrate. The micrometer scale level of HfO2/Al2O3 gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non in-situ ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.
中图分类号:
- 77.55.D-