中国物理B ›› 2017, Vol. 26 ›› Issue (7): 77302-077302.doi: 10.1088/1674-1056/26/7/077302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions

Hai-Lin Huang(黄海林), Deng-Jing Wang(王登京), Hong-Rui Zhang(张洪瑞), Hui Zhang(张慧), Chang-Min Xiong(熊昌民), Ji-Rong Sun(孙继荣), Bao-Gen Shen(沈保根)   

  1. 1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
    2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Department of Physics, Beijing Normal University, Beijing 100875, China
  • 收稿日期:2017-03-22 修回日期:2017-04-08 出版日期:2017-07-05 发布日期:2017-07-05
  • 通讯作者: Deng-Jing Wang E-mail:wangdengjing@wust.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos.11520101002 and 11474024).

Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions

Hai-Lin Huang(黄海林)1,2, Deng-Jing Wang(王登京)1, Hong-Rui Zhang(张洪瑞)2, Hui Zhang(张慧)2, Chang-Min Xiong(熊昌民)3, Ji-Rong Sun(孙继荣)2, Bao-Gen Shen(沈保根)2   

  1. 1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
    2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:2017-03-22 Revised:2017-04-08 Online:2017-07-05 Published:2017-07-05
  • Contact: Deng-Jing Wang E-mail:wangdengjing@wust.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos.11520101002 and 11474024).

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摘要：

Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

关键词: manganite, heterojunction, photocurrent

Abstract:

Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

Key words: manganite, heterojunction, photocurrent

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
75.47.Lx (Magnetic oxides) 73.50.Pz (Photoconduction and photovoltaic effects)