中国物理B ›› 2017, Vol. 26 ›› Issue (4): 45201-045201.doi: 10.1088/1674-1056/26/4/045201

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Ming Gao(高明), Hui-Wei Du(杜汇伟), Jie Yang(杨洁), Lei Zhao(赵磊), Jing Xu(徐静), Zhong-Quan Ma(马忠权)   

  1. 1 SHU-SOEN's Research and Development Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China;
    2 Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China
  • 收稿日期:2016-11-22 修回日期:2017-01-18 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Zhong-Quan Ma E-mail:zqma@shu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274067, 60876045, and 61674099) and the Research and Development Foundation of SHU-SOENs PV Joint Laboratory, China (Grant No. SS-E0700601).

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Ming Gao(高明)1, Hui-Wei Du(杜汇伟)1, Jie Yang(杨洁)1, Lei Zhao(赵磊)1, Jing Xu(徐静)2, Zhong-Quan Ma(马忠权)1,2   

  1. 1 SHU-SOEN's Research and Development Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China;
    2 Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China
  • Received:2016-11-22 Revised:2017-01-18 Online:2017-04-05 Published:2017-04-05
  • Contact: Zhong-Quan Ma E-mail:zqma@shu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274067, 60876045, and 61674099) and the Research and Development Foundation of SHU-SOENs PV Joint Laboratory, China (Grant No. SS-E0700601).

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摘要： The damage on the atomic bonding and electronic state in a SiOx(1.4-2.3 nm)/c-Si(150 μm) interface has been investigated. This occurred in the process of depositing indium tin oxide (ITO) film onto the silicon substrate by magnetron sputtering. We observe that this damage is caused by energetic particles produced in the plasma (atoms, ions, and UV light). The passivation quality and the variation on interface states of the SiOx/c-Si system were mainly studied by using effective minority carrier lifetime (τeff) measurement as a potential evaluation. The results showed that the samples' τeff was reduced by more than 90% after ITO formation, declined from 107 μs to 5 μs. Following vacuum annealing at 200℃, the τeff can be restored to 30 μs. The components of Si to O bonding states at the SiOx/c-Si interface were analyzed by x-ray photoelectron spectroscopy (XPS) coupled with depth profiling. The amorphous phase of the SiOx layer and the “atomistic interleaving structure” at the SiOx/c-Si interface was observed by a transmission electron microscope (TEM). The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds (or interface states) and effective minority carrier lifetime. After an appropriate annealing, the reduction of the Si dangling bonds between SiOx and near the c-Si surface is helpful to improve the passivation effect.

关键词: sputtered damage, SiOx/c-Si interface, effective minority carrier lifetime, XPS

Abstract: The damage on the atomic bonding and electronic state in a SiOx(1.4-2.3 nm)/c-Si(150 μm) interface has been investigated. This occurred in the process of depositing indium tin oxide (ITO) film onto the silicon substrate by magnetron sputtering. We observe that this damage is caused by energetic particles produced in the plasma (atoms, ions, and UV light). The passivation quality and the variation on interface states of the SiOx/c-Si system were mainly studied by using effective minority carrier lifetime (τeff) measurement as a potential evaluation. The results showed that the samples' τeff was reduced by more than 90% after ITO formation, declined from 107 μs to 5 μs. Following vacuum annealing at 200℃, the τeff can be restored to 30 μs. The components of Si to O bonding states at the SiOx/c-Si interface were analyzed by x-ray photoelectron spectroscopy (XPS) coupled with depth profiling. The amorphous phase of the SiOx layer and the “atomistic interleaving structure” at the SiOx/c-Si interface was observed by a transmission electron microscope (TEM). The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds (or interface states) and effective minority carrier lifetime. After an appropriate annealing, the reduction of the Si dangling bonds between SiOx and near the c-Si surface is helpful to improve the passivation effect.

Key words: sputtered damage, SiOx/c-Si interface, effective minority carrier lifetime, XPS

中图分类号:  (Atomic, molecular, ion, and heavy-particle collisions)

  • 52.20.Hv
68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics) 68.37.-d (Microscopy of surfaces, interfaces, and thin films) 73.20.-r (Electron states at surfaces and interfaces)