中国物理B ›› 2015, Vol. 24 ›› Issue (3): 38102-038102.doi: 10.1088/1674-1056/24/3/038102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process

王涛a, 于贺a, 董翔a, 蒋亚东a, 胡锐麟b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801, USA
  • 收稿日期:2014-07-01 修回日期:2014-09-28 出版日期:2015-03-05 发布日期:2015-03-05

Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process

Wang Tao (王涛)a, Yu He (于贺)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Wu Rui-Lin (胡锐麟)b   

  1. a School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
    b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801, USA
  • Received:2014-07-01 Revised:2014-09-28 Online:2015-03-05 Published:2015-03-05
  • Contact: Yu He E-mail:yuhe@uestc.edu.cn

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摘要：

An original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of N-doped VOx deposited with changing oxygen flow in the reactive gas mixture. In order to compare with the numerical model, N-doped VOx films are prepared by reactive magnetron sputtering from a metallic vanadium target immersed in a reactive gas mixture of Ar+O2+N2. Both experimental and numerical results show that the addition of N2 to the process alleviates the hysteresis effect with respect to the oxygen supply. Film compositions obtained from the XPS analysis are compared to the numerical results and the agreement is satisfactory. The results also show that the compound of VN is only found at very low O concentration because of the replacement reaction of VN by O2 atoms with higher oxygen flow rate.

关键词: N-doped vanadium oxide (VOx), XPS analysis

Abstract:

An original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of N-doped VOx deposited with changing oxygen flow in the reactive gas mixture. In order to compare with the numerical model, N-doped VOx films are prepared by reactive magnetron sputtering from a metallic vanadium target immersed in a reactive gas mixture of Ar+O2+N2. Both experimental and numerical results show that the addition of N2 to the process alleviates the hysteresis effect with respect to the oxygen supply. Film compositions obtained from the XPS analysis are compared to the numerical results and the agreement is satisfactory. The results also show that the compound of VN is only found at very low O concentration because of the replacement reaction of VN by O2 atoms with higher oxygen flow rate.

Key words: N-doped vanadium oxide (VOx), XPS analysis

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd