中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117312-117312.doi: 10.1088/1674-1056/25/11/117312
所属专题： TOPICAL REVIEW — Topological electronic states
• TOPICAL REVIEW—Topological electronic states • 上一篇 下一篇
Two-dimensional topological insulators with large bulk energy gap
Z Q Yang(杨中强), Jin-Feng Jia(贾金锋), Dong Qian(钱冬)
- 1 Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
2 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Two-dimensional topological insulators with large bulk energy gap
Z Q Yang(杨中强)1,2, Jin-Feng Jia(贾金锋)1,2, Dong Qian(钱冬)1,2
- 1 Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
2 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
摘要：
Two-dimensional (2D) topological insulators (TIs, or quantum spin Hall insulators) are special insulators that possess bulk 2D electronic energy gap and time-reversal symmetry protected one-dimensional (1D) edge state. Carriers in the edge state have the property of spin-momentum locking, enabling dissipation-free conduction along the 1D edge. The existence of 2D TIs was confirmed by experiments in semiconductor quantum wells. However, the 2D bulk gaps in those quantum wells are extremely small, greatly limiting potential application in future electronics and spintronics. Despite this limitation, 2D TIs with a large bulk gap attracted plenty of interest. In this paper, recent progress in searching for TIs with a large bulk gap is reviewed briefly. We start by introducing some theoretical predictions of these new materials and then discuss some recent important achievements in crystal growth and characterization.
中图分类号: (Electron states at surfaces and interfaces)
- 73.20.-r