中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108802-108802.doi: 10.1088/1674-1056/24/10/108802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

郑新和a b, 刘三姐a, 夏宇a, 甘兴源b, 王海啸b, 王乃明b, 杨辉b   

  1. a Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
    b Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2015-03-18 修回日期:2015-04-28 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:
    Project supported by the SINANO-SONY Joint Program (Grant No. Y1AAQ11001), the National Natural Science Foundation of China (Grant No. 61274134), the USCB Start-up Program (Grant No. 06105033), and the International Cooperation Projects of Suzhou City, China (Grant No. SH201215).

GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

Zheng Xin-He (郑新和)a b, Liu San-Jie (刘三姐)a, Xia Yu (夏宇)a, Gan Xing-Yuan (甘兴源)b, Wang Hai-Xiao (王海啸)b, Wang Nai-Ming (王乃明)b, Yang Hui (杨辉)b   

  1. a Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
    b Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2015-03-18 Revised:2015-04-28 Online:2015-10-05 Published:2015-10-05
  • Contact: Zheng Xin-He E-mail:xinhezheng@ustb.edu.cn;xhzheng2009@sinano.ac.cn
  • Supported by:
    Project supported by the SINANO-SONY Joint Program (Grant No. Y1AAQ11001), the National Natural Science Foundation of China (Grant No. 61274134), the USCB Start-up Program (Grant No. 06105033), and the International Cooperation Projects of Suzhou City, China (Grant No. SH201215).

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摘要： We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 mA/cm2, but a low open-circuit voltage range of 1.4 V～1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy (SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended GaAs n++ /p++ junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ～ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening, which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell.

关键词: Te doping, Mg doping, GaAs tunnel junction, GaInP/GaAs tandem solar cell, molecular beam epitaxy

Abstract: We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 mA/cm2, but a low open-circuit voltage range of 1.4 V～1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy (SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended GaAs n++ /p++ junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ～ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening, which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell.

Key words: Te doping, Mg doping, GaAs tunnel junction, GaInP/GaAs tandem solar cell, molecular beam epitaxy

中图分类号:  (Solar cells (photovoltaics))

  • 88.40.H-
88.40.jm (Thin film III-V and II-VI based solar cells) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 03.65.Xp (Tunneling, traversal time, quantum Zeno dynamics)