Landau level transitions in InAs/AlSb/GaSb quantum wells

doi:10.1088/1674-1056/24/9/097301

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/24/9/097301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Landau level transitions in InAs/AlSb/GaSb quantum wells

吴晓光^a, 庞蜜^b

a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Department of Applied Physics, Xi'an University of Technology, Xi'an 710054, China

收稿日期:2015-03-13 修回日期:2015-04-21 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303).

Landau level transitions in InAs/AlSb/GaSb quantum wells

Wu Xiao-Guang (吴晓光)^a, Pang Mi (庞蜜)^b

a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Department of Applied Physics, Xi'an University of Technology, Xi'an 710054, China

Received:2015-03-13 Revised:2015-04-21 Online:2015-09-05 Published:2015-09-05
Contact: Wu Xiao-Guang E-mail:xgwu@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303).

摘要/Abstract

摘要： The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron-hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron-hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.

关键词: Landau level, quantum well, electron-hole hybridization

Abstract: The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron-hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron-hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.

Key words: Landau level, quantum well, electron-hole hybridization

中图分类号: (Quantum wells)

73.21.Fg

78.20.Ls (Magneto-optical effects) 78.30.Fs (III-V and II-VI semiconductors) 78.67.De (Quantum wells)

吴晓光, 庞蜜. Landau level transitions in InAs/AlSb/GaSb quantum wells[J]. 中国物理B, 2015, 24(9): 97301-097301.

Wu Xiao-Guang (吴晓光), Pang Mi (庞蜜). Landau level transitions in InAs/AlSb/GaSb quantum wells[J]. Chin. Phys. B, 2015, 24(9): 97301-097301.

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Landau level transitions in InAs/AlSb/GaSb quantum wells

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