中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97202-097202.doi: 10.1088/1674-1056/24/9/097202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

马莉, 沈光地, 高志远, 徐晨   

  1. Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2015-01-06 修回日期:2015-04-01 出版日期:2015-09-05 发布日期:2015-09-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204009) and the Natural Science Foundation of Beijing, China (Grant No. 4142005).

Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

Ma Li (马莉), Shen Guang-Di (沈光地), Gao Zhi-Yuan (高志远), Xu Chen (徐晨)   

  1. Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • Received:2015-01-06 Revised:2015-04-01 Online:2015-09-05 Published:2015-09-05
  • Contact: Ma Li E-mail:mali@emails.bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204009) and the Natural Science Foundation of Beijing, China (Grant No. 4142005).

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摘要： A new epitaxial structure of AlGaInP-based light-emitting diode (LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide (ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer (CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

关键词: light-emitting diodes, Schottky current blocking layer, current spreading

Abstract: A new epitaxial structure of AlGaInP-based light-emitting diode (LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide (ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer (CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

Key words: light-emitting diodes, Schottky current blocking layer, current spreading

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
85.60.Jb (Light-emitting devices) 82.45.Qr (Electrodeposition and electrodissolution) 78.60.Fi (Electroluminescence)