中国物理B ›› 2015, Vol. 24 ›› Issue (6): 64211-064211.doi: 10.1088/1674-1056/24/6/064211
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
谭少阳, 翟腾, 张瑞康, 陆丹, 王圩, 吉晨
Tan Shao-Yang (谭少阳), Zhai Teng (翟腾), Zhang Rui-Kang (张瑞康), Lu Dan (陆丹), Wang Wei (王圩), Ji Chen (吉晨)
摘要: Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
中图分类号: (Propagation, scattering, and losses; solitons)