Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

doi:10.1088/1674-1056/24/6/064211

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 64211-064211.doi: 10.1088/1674-1056/24/6/064211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

谭少阳, 翟腾, 张瑞康, 陆丹, 王圩, 吉晨

Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2014-11-10 修回日期:2014-12-11 出版日期:2015-06-05 发布日期:2015-06-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274046, 61335009, 61201103, and 61320106013) and the National High Technology Research and Development Program of China (Grant No. 2013AA014202).

Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

Tan Shao-Yang (谭少阳), Zhai Teng (翟腾), Zhang Rui-Kang (张瑞康), Lu Dan (陆丹), Wang Wei (王圩), Ji Chen (吉晨)

Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2014-11-10 Revised:2014-12-11 Online:2015-06-05 Published:2015-06-05
Contact: Tan Shao-Yang E-mail:tanshy10@semi.ac.cn
About author:42.81.Dp; 42.25.Bs; 42.55.Px
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274046, 61335009, 61201103, and 61320106013) and the National High Technology Research and Development Program of China (Grant No. 2013AA014202).

摘要/Abstract

摘要： Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

关键词: internal loss, free carrier absorption, semiconductor laser

Abstract: Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

Key words: internal loss, free carrier absorption, semiconductor laser

中图分类号: (Propagation, scattering, and losses; solitons)

42.81.Dp

42.25.Bs (Wave propagation, transmission and absorption) 42.55.Px (Semiconductor lasers; laser diodes)

谭少阳, 翟腾, 张瑞康, 陆丹, 王圩, 吉晨. Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers[J]. 中国物理B, 2015, 24(6): 64211-064211.

Tan Shao-Yang (谭少阳), Zhai Teng (翟腾), Zhang Rui-Kang (张瑞康), Lu Dan (陆丹), Wang Wei (王圩), Ji Chen (吉晨). Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers[J]. Chin. Phys. B, 2015, 24(6): 64211-064211.

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Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

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