Semiconductor photonic crystal laser

doi:10.1088/1674-1056/27/11/114211

中国物理B ›› 2018, Vol. 27 ›› Issue (11): 114211-114211.doi: 10.1088/1674-1056/27/11/114211

所属专题： TOPICAL REVIEW — Nanolasers

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Semiconductor photonic crystal laser

Wanhua Zheng(郑婉华)

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 College of Future Technology, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-02-28 修回日期:2018-09-13 出版日期:2018-11-05 发布日期:2018-11-05
通讯作者: Wanhua Zheng E-mail:whzheng@semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0401804, 2016YFB0402203, 2016YFA0301102, and 2017YFA0206400), the National Natural Science Foundation of China (Grant Nos. 91850206, 61535013, 61137003, 61321063, and 61404133), and the Special Fund for Strategic Pilot Technology, Chinese Academy of Sciences (Grant Nos. XDB24010100, XDB24010200, XDB24020100, and XDB24030100).

Semiconductor photonic crystal laser

Wanhua Zheng(郑婉华)^1,2,3

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 College of Future Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-02-28 Revised:2018-09-13 Online:2018-11-05 Published:2018-11-05
Contact: Wanhua Zheng E-mail:whzheng@semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0401804, 2016YFB0402203, 2016YFA0301102, and 2017YFA0206400), the National Natural Science Foundation of China (Grant Nos. 91850206, 61535013, 61137003, 61321063, and 61404133), and the Special Fund for Strategic Pilot Technology, Chinese Academy of Sciences (Grant Nos. XDB24010100, XDB24010200, XDB24020100, and XDB24030100).

摘要/Abstract

摘要：

By combing artificial micro-nano structures, photonic crystals (PCs), with traditional semiconductor laser material to realize the dynamic collaborative control of photonic states and confined electrons, the band engineering of the PC has been confirmed. This brings new development space for the semiconductor laser, such as for low threshold and high efficiency. Based on a series of works by Zheng's group, this paper has reviewed kinds of PC lasers including electrical injection PC vertical cavity and lateral cavity surface-emitting lasers, and PC high beam quality lasers, to show that the PC is vital for promoting the continuous improvement of semiconductor laser performance at present and in the future.

关键词: semiconductor laser, photonic crystal, complex cavity

Abstract:

Key words: semiconductor laser, photonic crystal, complex cavity

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.70.Qs (Photonic bandgap materials) 42.60.Fc (Modulation, tuning, and mode locking)

郑婉华. Semiconductor photonic crystal laser[J]. 中国物理B, 2018, 27(11): 114211-114211.

Wanhua Zheng(郑婉华). Semiconductor photonic crystal laser[J]. Chin. Phys. B, 2018, 27(11): 114211-114211.

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Semiconductor photonic crystal laser

Semiconductor photonic crystal laser

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