›› 2015, Vol. 24 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/24/2/026802
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
王建霞a b, 汪连山a, 张谦b, 孟祥岳b, 杨少延a, 赵桂娟a, 李辉杰a, 魏鸿源a, 王占国a
Wang Jian-Xia (王建霞)a b, Wang Lian-Shan (汪连山)a, Zhang Qian (张谦)b, Meng Xiang-Yue (孟祥岳)b, Yang Shao-Yan (杨少延)a, Zhao Gui-Juan (赵桂娟)a, Li Hui-Jie (李辉杰)a, Wei Hong-Yuan (魏鸿源)a, Wang Zhan-Guo (王占国)a
摘要: In this paper, we use the a-plane InGaN interlayer to improve the property of a-plane GaN. Based on the a-InGaN interlayer, a template exhibits that a regular, porous structure, which acts as a compliant effect, can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire. We find that the thickness of InGaN has a great influence on the growth of a-GaN. The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer. When the InGaN thickness exceeds a critical point, the a-GaN epilayer peels off in the process of cooling down to room temperature. This is an attractive way of lifting off a-GaN films from the sapphire substrate.
中图分类号: (Atomic force microscopy (AFM))