中国物理B ›› 2015, Vol. 24 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/24/1/017302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

赵一, 张进成, 薛军帅, 周小伟, 许晟瑞, 郝跃   

  1. Key Laboratory of Wind Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2014-06-26 修回日期:2014-08-27 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404099 and 61306017) and the Fundamental Research Funds for the Central Universities, China (Grant No. JB141101).

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

Zhao Yi (赵一), Zhang Jin-Cheng (张进成), Xue Jun-Shuai (薛军帅), Zhou Xiao-Wei (周小伟), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃)   

  1. Key Laboratory of Wind Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2014-06-26 Revised:2014-08-27 Online:2015-01-05 Published:2015-01-05
  • Contact: Zhang Jin-Cheng E-mail:jchzhang@xidian.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404099 and 61306017) and the Fundamental Research Funds for the Central Universities, China (Grant No. JB141101).

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摘要：

In order to investigate the influence of compressive strain on indium incorporation in InAlN and InGaN ternary nitrides, InAlN/GaN heterostructures and InGaN films were grown by metal-organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by GaN buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the InGaN films, compressive strains are changed by employing AlGaN templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both InAlN and InGaN. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in InGaN ternary alloys.

关键词: compressive strain, indium incorporation, InAlN, InGaN

Abstract:

In order to investigate the influence of compressive strain on indium incorporation in InAlN and InGaN ternary nitrides, InAlN/GaN heterostructures and InGaN films were grown by metal-organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by GaN buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the InGaN films, compressive strains are changed by employing AlGaN templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both InAlN and InGaN. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in InGaN ternary alloys.

Key words: compressive strain, indium incorporation, InAlN, InGaN

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 79.60.Jv (Interfaces; heterostructures; nanostructures) 78.70.Ck (X-ray scattering)